Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 297-301

  Balandin, A ^a   Wang, K L ^b   Cai, S ^b   Li, R ^b   Viswanathan, C R ^b   Wang, E N ^c   Wojtowicz, M ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

FLICKER NOISE; GENERATION-RECOMBINATION PEAKS;

FIELD EFFECT TRANSISTORS;

EID: 0033873828     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0066-8     Document Type: Article

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