Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN

Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 129-133

  Kim, Jong Kyu ^a   Kim, Ki Jeong ^a   Kim, Bongsoo ^a   Kim, Jae Nam ^b   Kwak, Joon Seop ^c   Park, Yong Jo ^c   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Research Institute of Industrial Science and Technology (RIST)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Band bending; Fermi level; Ohmic contact; P type GaN; Photo emission spectroscopy

Indexed keywords

ANNEALING; BAND STRUCTURE; BENDING (DEFORMATION); ELECTRIC CONDUCTIVITY OF SOLIDS; EMISSION SPECTROSCOPY; FERMI LEVEL; INORGANIC CHEMICALS; OHMIC CONTACTS; PHOTOEMISSION; REDUCTION; SURFACE TREATMENT; SYNCHROTRON RADIATION;

AQUA REGIA SOLUTION; CONTACT RESISTIVITY; PHOTOELECTRON DETECTION ANGLE; SURFACE BAND BENDING; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 0035274131     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0005-3     Document Type: Article

References (16)