Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

IEEE Transactions on Microwave Theory and Techniques

Volumn 47, Issue 8, 1999, Pages 1413-1417

  Balandin, A ^a   Morozov, S V ^b   Cai, S ^a   Li, R ^a   Wang, K L ^b   Wijeratne, G ^b   Viswanathan, C R ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; NITROGEN COMPOUNDS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SIGNAL NOISE MEASUREMENT;

MICROWAVE COMMUNICATION SYSTEMS;

FIELD EFFECT TRANSISTORS;

EID: 0032665814     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.780388     Document Type: Article

References (13)

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