AIGaN/GaN HEMTs grown on SiC substrates

Electronics Letters

Volumn 33, Issue 3, 1997, Pages 242-243

  Binari, S C ^a   Redwing, J M ^b   Keiner, G ^a   Kruppa, W ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Advanced Technology Materials Inc   (United States)

Author keywords

High electron mobility transistors; Silicon carbide

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

DRAIN OHMIC CONTACTS; ELECTRON BEAM EVAPORATION; GATE LAG MEASUREMENT; SOURCE CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030822317     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970122     Document Type: Article

References (11)

1. KHAN, M.A., KUZNIA, J.N., BHATTARAI, A.R. and OLSON, D.T.: 'Metal semiconductor field effect transistor based on single crystal GaN', Appl. Phys. Lett., 1993, 62, pp. 1786-1787
2. BINARI, S.C.: 'GaN FETs for high-temperature and microwave applications', Electrochem. Soc. Proc., 1995, 95-21, pp. 136-143
3. ZOLPER, J.C., SHUL, R.J., BACA, A.G., WILSON, R.G., PEARTON, S.J., and STALL, R.A.: 'Ion-implanted GaN junction field effect transistors', Appl. Phys. Lett., 1996, 66, pp. 2273-2275
4. KHAN, M.A., CHEN, Q., YANG, J.W., SHUR, M.S., DERMOTT, B.T., and HIGGINS, I.A.: 'Microwave operation of GaN/AlGaN doped channel heterostructure field effect transistors', IEEE Electron Device Lett., 1996, 17, pp. 325-327
5. BINARI, S.C. ROWLAND, L.B., KELNER, G., KRUPPA, W., DIETRICH, H.B., DOVERSPIKE, K., and GASKILL, D.K.: 'DC, microwave, and high-temperature characteristics of GaN FET structures'. Inst. Phys. Conf. Ser. No. 141, 1995, pp. 459-462
6. BURM, J., SCHAFF, W.J., EASTMAN, L.F., AMANO, H., and AKASAKI, I.: '75 Å GaN channel modulation doped field effect transistors', Appl. Phys. Lett., 1996, 68, pp. 2849-2851
7. WU, Y.F., KELLER, B.P., KELLER, S., KAPOLNEK, D., KOZODOY, P., DENBAARS, S.P., and MISHRA, U.: 'Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors', Appl. Phys. Lett., 1996, 69, pp. 1438-1440
8. ÖZGÜR, A., KIM, W., FAN, Z., BOTCHKAREV, A., SALVADOR, A., MOHAMMAD, S.N., SVERDLOV, B., and MORKOC, H.: 'High transconductance-normally-off GaN MODFETs', Electron. Lett., 1995, 31, pp. 1389-1390
9. WEITZEL, C.E.: 'Wide bandgap semiconductor RF MESFET power densities'. Inst. Phys. Conf. Ser. No. 142, 1996, pp. 765-768
10. REDWING, J.M., TISCHLER, M.A., FLYNN, J.S., ELHAMRI, S., AHOUJJA, M., NEWROCK, R.S., and MITCHEL, W.C.: 'Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates'. Appl. Phys. Lett., 1996, 69, pp. 963-965
11. BINARI, S.C., DIETRICH, H.B., KELNER, G., ROWLAND, L.B., DOVERSPIKE, K., and WICKENDEN, D.K.: 'H, He, N implant isolation of n-type GaN', J. Appl. Phys., 1995, 78, pp. 3008-3011