Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2937-2939

  Jang, Ho Won ^a   Urbanek, W ^a   Yoo, M C ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; LIGHT TRANSMITTANCE; LOW RESISTIVITY; OUT-DIFFUSION; OXIDATION ANNEALING; P-TYPE GAN; SCHOTTKY BARRIER HEIGHTS;

ELECTRIC CONTACTORS; LIGHT TRANSMISSION; OHMIC CONTACTS; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SCHOTTKY BARRIER DIODES;

GALLIUM NITRIDE;

EID: 79956011409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1474609     Document Type: Article

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