High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 77, Issue 18, 2000, Pages 2888-2890

  Manfra, M J ^a   Pfeiffer, L N ^a   West, K W ^a   Stormer, H L ^a   Baldwin, K W ^a   Hsu, J W P ^a   Lang, D V ^a   Molnar, R J ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001357668     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1323856     Document Type: Article

References (11)

1. C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, and J. S. Speck, Appl. Phys. Lett. 74, 3528 (1999).
2. I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Ventry, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, J. Appl. Phys. 86, 4520 (1999).
3. L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, and H. L. Stormer, Appl. Phys. Lett. 76, 742 (2000).
4. T. Wang, Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, and H. Ohno, Appl. Phys. Lett. 74, 3531 (1999).
5. L. Hsu and W. Walukiewicz, Phys. Rev. B 56, 1520 (1997).
6. D. Jena, A. C. Gossard, and U. K. Mishra, cond-mat/0004204, 2000.
7. D. Jena, A. C. Gossard, and U. K. Mishra, Appl. Phys. Lett. 76, 1707 (2000).
8. R. J. Molnar, W. Gotz, L. T. Romano, and N. M. Johnson, J. Cryst. Growth 178, 147 (1997).
9. A. J. Ptak, M. R. Millecchia, T. H. Myers, K. S. Ziemer, and C. D. Stinespring, Appl. Phys. Lett. 74, 3836 (1999).
10. Y. Zhang, I. P. Smorchkova, C. R. Elsass, S. Keller, J. P. Ibbetson, S. DenBaars, U. K. Mishra, and J. Singh, J. Appl. Phys. 87, 7981 (2000).
11. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Halsted, New York, 1988).