Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Journal of Applied Physics

Volumn 88, Issue 11, 2000, Pages 6726-6730

  Rumyantsev, S L ^a,b   Pala, N ^a   Shur, M S ^a   Gaska, R ^a   Levinshtein, M E ^b   Asif Khan, M ^c   Simin, G ^c   Hu, X ^c   Yang, J ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001668518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1321790     Document Type: Article

References (12)

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