Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7682-7688

  Yamaguchi, Shigeo ^a   Kariya, Michihiko ^a   Nitta, Shugo ^a   Takeuchi, Tetsuya ^a   Wetzel, Christian ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; FILM GROWTH; GRAIN GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; INDIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032607927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370571     Document Type: Article

References (29)

1. S. Nakamura, M. Senoh, S. Nagahata, N. Iwasa, T. Yamada, T. Matsushita, H. Hiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L74 (1996).
2. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano, Electron. Lett. 32, 1105 (1996).
3. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L177 (1997).
4. H. J. Hovel and J. J. Cuomo, Appl. Phys. Lett. 20, 71 (1972).
5. K. Kubota, Y. Kobayashi, and K. Fujimoto, J. Appl. Phys. 66, 2984 (1989).
6. Q. X. Guo, T. Yamamura, A. Yoshida, and N. Itoh, J. Appl. Phys. 75, 4927 (1994).
7. Q. X. Guo, O. Kato, and A. Yoshida, J. Appl. Phys. 73, 7969 (1993).
8. T. L. Tansley and C. P, Foley, J. Appl. Phys. 59, 3241 (1986).
9. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
10. A. Wakahara and A. Yoshida, Appl. Phys. Lett. 54, 709 (1989).
11. A. Wakahara, T. Tsuchiya, and A. Yoshida, J. Cryst. Growth 99, 385 (1990).
12. K. Kubota, Y. Kobayashi, and K. Fujimoto, J. Appl. Phys. 66, 2984 (1989).
13. S. Nitta, M. Kariya, S. Yamaguchi, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. (submitted).
14. F. A. Ponce, Topical Workshop on III-V Nitrides, Abstracts, A-4 (1995), Japan.
15. R. Juzaa and H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938).
16. S. Strite, D. Chandrasekhar, D. J. Smith, J. Sariel, H. Chen, and N. Teraguchi, J. Cryst Growth 127, 204 (1993).
17. G. Gieseke, Semicond. Semimet. 2, 63 (1966).
18. K. Osamaura, S. Naka, and Y. Murakami, J. Appl. Phys. 46, 3432 (1975).
19. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
20. A. Wakahara and A. Yoshida, Appl. Phys. Lett. 54, 2984 (1989).
21. Y-X. Li, L.-S.-Riba, V. Talyan, T. Vankatesan, C. Wongchigul, P. Zhou, X. Tang, and M. G. Spencer, Mater. Res. Soc. Symp. Proc. 449, 453 (1996).
22. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
23. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
24. S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. Denbaars, Jpn. J. Appl. Phys., Part 2 35, L285 (1996).
25. H. Amano, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 27, L1384 (1988).
26. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 31, L1454 (1992).
27. K. Hiramatsu, T. Detchprohm, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 32, 1528 (1993).
28. I. Gorczyca and N. E. Christensen, Physica B 185, 410 (1992).
29. W. T. Read, Dislocations in Crystals (McGraw-Hill, New York, 1953).