DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

IEEE Electron Device Letters

Volumn 19, Issue 2, 1998, Pages 54-56

  Ping, A T ^a   Chen, Q ^b   Yang, J W ^b   Asif Khan, M ^b,c   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b APA Optronics   (United States)

^c University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FREQUENCY RESPONSE; HETEROJUNCTIONS; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; TRANSCONDUCTANCE;

LATTICE MISMATCH;

FIELD EFFECT TRANSISTORS;

EID: 0032001933     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.658603     Document Type: Article

References (7)

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