Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 71, Issue 25, 1997, Pages 3673-3675

  Gaska, R ^a   Yang, J W ^a   Osinsky, A ^a   Bykhovski, A D ^b,d   Shur, M S ^c  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000977216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120477     Document Type: Article

References (13)

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