GaN HBT: Toward an RF device

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 543-551

  McCarthy, L S ^a,b   Smorchkova, I P ^a   Xing, H ^a   Kozodoy, P ^a,c   Fini, P ^a   Limb, J ^d   Pulfrey, D L ^e   Speck, J S ^a   Rodwell, M J W ^a   DenBaars, S P ^e   Mishra, U K ^a  

^a University of California   (United States)

^b NITRONEX CORPORATION   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d Department of Law   (United States)

^e UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Base grading; Bipolar; Common base; Common emitter; Compensation; Current gain; GaN; Gummel; HBT; Leakage; LEO; MBE; Memory effect; Mg; MOCVD; Offset; Regrowth; RIE; Threading dislocations; Transistor

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

BASE GRADING; COMMON EMITTER; CURRENT GAIN; THREADING DISLOCATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035279585     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906449     Document Type: Article

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