A comparative study of surface passivation on AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1441-1444

  Lu, W ^a   Kumar, V ^a   Schwindt, R ^a   Piner, E ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Epitronics/ATMI   (United States)

Author keywords

AlGaN; GaN; HEMT; Minimum noise figure; Passivation

Indexed keywords

CAPACITANCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; MICROWAVES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036721744     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00089-8     Document Type: Article

References (12)

1. High breakdown GaN HEMT with overlapping gate structure
2. AlGaN/GaN HEMT's on SiC with over 100 GHz and low microwave noise
3. T of 110 GHz
4. GaN microwave electronics
5. GaN based transistors for high power applications
6. GaN: Processing, defects, and devices
7. Wide bandgap semiconductor microwave technologies: From promise to practice
8. High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high power performance
9. High power demonstration at a10 GHz with GaN/AlGaN HEMT hybrid amplifiers
10. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
11. Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors
12. Surface-charge controlled AlGaN/GaN-power HFET without current collapse and Gm dispersion