Performance predictions for N-P-N AlxGa1-xN/GaN HBTs

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 597-602

  Pulfrey, D L ^a   Fathpour, S ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

AlGaN; Current gain; Cut off frequency; HBTs; Spontaneous polarization

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; IONIZATION; MATHEMATICAL MODELS; NATURAL FREQUENCIES; PERFORMANCE; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; BASE EMITTER VOLTAGE; CUT-OFF FREQUENCY; EBERS-MOLL FORMULATION; FORWARD-ACTIVE MODEL; MINORITY CARRIER LIFETIME; THERMAL VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035279882     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906457     Document Type: Article

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