Growth of gallium nitride by hydride vapor-phase epitaxy

Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 147-156

  Molnar, R J ^a   Gotz W ^b   Romano, L T ^b   Johnson, N M ^b  

^a MIT LINCOLN LABORATORY   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Gallium nitride; Growth; Hydride vapor phase epitaxy; Substrate

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; HALL EFFECT; HYDRIDES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; THICK FILMS; VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY (HVPE); GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING FILMS;

EID: 0031150308     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00075-4     Document Type: Article

References (27)

1. Z.L. Liau, R.L. Aggarwal, P.A. Maki, R.J. Molnar, J.N. Walpole, R.C. Williamson and I. Melngailis, Appl. Phys. Lett. 69 (1996) 1665.
2. M.A. Khan, M.S. Shur, J.N. Kuznia, Q. Chen, J. Burm and W. Schaff, Appl. Phys. Lett. 66 (1995) 1083.
3. S.D. Lester, F.A. Ponce, M.A. Craford and D.A. Steigerald, Appl. Phys. Lett. 66 (1995) 1249.
4. J. Katpinski, S. Porowski and S. Miotkowska, J. Crystal Growth 56 (1982) 77.
5. T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki, Appl. Phys. Lett. 61 (1992) 2688.
6. R.J. Molnar, K.B. Nichols, P. Maki, E.R. Brown and I. Melngailis, Mater. Res. Soc. Symp. Proc. 378 (1995) 479.
7. N.R. Perkins, M.N. Horton and T.F. Kuech, Mater. Res. Soc. Symp. Proc. 395 (1996) 243.
8. H.P. Maruska and J.J. Tietjen, Appl. Phys. Lett. 15 (1969) 327.
9. V.S. Ban, J. Electrochem. Soc. 119 (1972) 761.
10. M. Ilegems, J. Crystal Growth 13/14 (1972) 360.
11. W. Scifert, R. Franzheld, E. Butter, H. Sobotta and V. Reide, Cryst. Res. Technol. 18 (1983) 383.
12. J.J. Nickl, W. Just and R. Bertinger, Mater. Res. Bull. 9 (1974) 1413.
13. H. Lee and J.S. Harris, Jr., J. Crystal Growth 169 (1996) 689.
14. H. Tsuchiya, M. Akamatsu, M. Ishida and F. Hasegawa, Jpn. J. Appl Phys. 35 (1996) L748.
15. S.A. Safvi, N.R. Perkins, M.N. Horton, A. Thon, D. Zhi and T.F. Kuech, Mater. Res. Soc. Symp. Proc. 423 (1996) 227.
16. W.M. Yim, E.J. Stofko, P.J. Zanzucchi, J.I. Pankove, M. Ettenberg and S.L. Gilbert, J. Appl. Phys. 44 (1973) 292.
17. B. Baranov, L. Däweritz, V.B. Gutan, G. Jungk, H. Neumann and H. Raidt, Phys. Status Solidi 49 (1978) 629.
18. M. Sano and M. Aoki, Jpn. J. Appl. Phys. 15 (1976) 1943.
19. R.J. Molnar, P. Maki, R. Aggarwal, Z.L. Liau, E.R. Brown. I. Melngailis, W. Götz, L.T. Romano and N.M. Johnson, Mater. Res. Soc. Symp. Proc. 423 (1996) 221.
20. R.J. Molnar, R. Aggarwal, Z.L. Liau, E.R. Brown, I. Melngailis, W. Götz, L.T. Romano and N.M. Johnson, Mater. Res. Soc. Symp. Proc. 395 (1996) 189.
21. K. Naniwae, S. Itoh, H. Amano, K. Itoh, K. Hiramatsu and I. Akasaki, J. Crystal Growth 99 (1990) 381.
22. S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
23. L.T. Romano, R.J. Molnar, B.S. Krusor, G.A. Anderson, D.P. Bour and P. Maki, Mater. Res. Soc. Symp. Proc. 423 (1996) 245.
24. T. Detchprohm, H. Amano, K. Hiramatsu and I. Akasaki, J. Crystal Growth 128 (1993) 384.
25. R.J. Molnar, T. Lei and T.D. Moustakas, Appl. Phys. Lett. 62 (1993) 72.
26. W. Götz, L.T. Romano, J. Walker, N.M. Johnson and R.J. Molnar, Appl Phys. Lett., to be published.
27. R.L. Aggarwal, P.A. Maki, R.J. Molnar, Z.-L. Liau and I. Melngailis, J. Appl. Phys. 79 (1996) 2148.