High-power 10-GHz operation of AlGaN HFET's on insulating SiC

IEEE Electron Device Letters

Volumn 19, Issue 6, 1998, Pages 198-200

  Sullivan, G J ^a   Chen, M Y ^a   Higgins, J A ^a   Yang, J W ^b,c   Chen, Q ^b   Pierson, R L ^a   McDermott, B T ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

^b APA Optronics   (United States)

^c University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATING MATERIALS; ELECTRIC POWER MEASUREMENT; HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0032098587     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.678543     Document Type: Article

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