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Volumn 84, Issue 12, 1998, Pages 6680-6685

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

(6) Kim, Wook a Botchkarev, A E b Morkoc H b Fang, Z Q c Look, D C c Smith, David J d

a LG (South Korea)

b Virginia Commonwealth University (United States)

c WRIGHT STATE UNIVERSITY (United States)

d ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001500306 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.369044 Document Type: Article

Times cited : (19)

References (19)

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