Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 450-457

  Sacconi, Fabio ^a   Di Carlo, Aldo ^a   Lugli, P ^a   Morkoç, Hadis ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

Gallium compounds; Piezoelectric semiconductors; Quantization; Semiconductor device modeling; Semiconductor heterojunctions

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PIEZOELECTRICITY; POISSON EQUATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE; CURRENT FLOW; HETEROJUNCTION FIELD EFFECT TRANSISTORS; MODULATION DOPED FIELD EFFECT TRANSISTORS; PIEZOELECTRIC POLARIZATION EFFECTS; SCHRODINGER EQUATION;

HETEROJUNCTIONS;

EID: 0035279717     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906435     Document Type: Article

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