Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies

Electronics Letters

Volumn 35, Issue 16, 1999, Pages 1380-1382

  Nguyen, C ^a   Nguyen, N X ^a   Grider, D E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE MEASUREMENT; MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DRAIN CURRENT; MICROWAVE FREQUENCIES; MOBILE ELECTRONS; MODFETS;

FIELD EFFECT TRANSISTORS;

EID: 0032637092     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990957     Document Type: Article

References (9)

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2. WU. y.-F., et al: '3-watt AlGaN/GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding'. 56th Annual Device Research Conf., University of Virginia at Charlottesville, VA, USA, 1998
3. 0.5N/GaN MODFETs with power density < 3W/mm at ISGHz', Electron. Lett.. 1997, 33, (20), pp. 1742-1743
4. WU, y.-F., et al: 'High Al-content ALGaN/GaN MODFETs for ultrahiah performance', IEEE Electron Device Lett., 1998, 19, (2), pp. 50-53
5. CHEN, Q., et al.: 'High power microwave 0.25μm gate dopedchannel GaN/AlGaN heterostructure field effect transistor', IEEE Electron Device Lett., 1998, 19, (2), pp. 44-46
6. WU, Y.-F., et al.: 'High speed and high power AlGaN/GaN MODFETs'. 55th Annual Device Research Conf., Ft. Collins, CO, USA, 1997
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8. KGUYEN.N.X., et a.: 'GaN/AlGaN MODFET with 80GHZ and 100V gate-drain breakdown voltaee', Electron. Lett., 1997, 33, (4), pp. 334-335
9. KGUYEN, C, et al.: 'High performance GaN/AlGaN MODFETs grown by RF-assisted MBE', Electron. Lett., 1998, 34, (3), pp. 309-311