-
1
-
-
21544481768
-
The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure
-
Bykhovski A., Gelmont B., Shur M.S. The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure. J Appl Phys. 74:(11):1993;6734-6739.
-
(1993)
J Appl Phys
, vol.74
, Issue.11
, pp. 6734-6739
-
-
Bykhovski, A.1
Gelmont, B.2
Shur, M.S.3
-
2
-
-
0031268156
-
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
-
Yu E.T., Sullivan G.J., Asbeck P.M., Wang C.D., Qiao D., Lau S.S. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors. Appl Phys Lett. 71:(19):1997;2794-2796.
-
(1997)
Appl Phys Lett
, vol.71
, Issue.19
, pp. 2794-2796
-
-
Yu, E.T.1
Sullivan, G.J.2
Asbeck, P.M.3
Wang, C.D.4
Qiao, D.5
Lau, S.S.6
-
3
-
-
0038819799
-
GaN-based pyroelectronics and piezoelectronics
-
In: Francombe M, Wood CEC, editors. Academic Press, to be published
-
Shur MS, Bykhovski AD, Gaska R, Khan MA. GaN-based pyroelectronics and piezoelectronics. In: Francombe M, Wood CEC, editors. Semiconductor homo- and hetero-device structures. Academic Press, to be published.
-
Semiconductor Homo- And Hetero-device Structures
-
-
Shur, M.S.1
Bykhovski, A.D.2
Gaska, R.3
Khan, M.A.4
-
4
-
-
84992286860
-
-
Private communication, February
-
Colin Wood. Private communication, February 1997.
-
(1997)
-
-
Colin, W.1
-
5
-
-
84942040585
-
Fundamentals, performance and reliability of III-V compound semiconductor heterojunction bipolar transistors
-
M.S. Shur. New Jersey: World Scientific
-
Gao G.-B., Mohammand S.N., Martin G.A., Morkoc H. Fundamentals, performance and reliability of III-V compound semiconductor heterojunction bipolar transistors. Shur M.S. Compound semiconductor electronics: the age of maturity. 1996;World Scientific, New Jersey.
-
(1996)
Compound Semiconductor Electronics: The Age of Maturity
-
-
Gao, G.-B.1
Mohammand, S.N.2
Martin, G.A.3
Morkoc, H.4
-
6
-
-
0346586798
-
Elastic strain relaxation and piezoelectric effect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
-
Bykhovski A., Gelmont B., Shur M.S. Elastic strain relaxation and piezoelectric effect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices. J Appl Phys. 81:(9):1997;6332-6338.
-
(1997)
J Appl Phys
, vol.81
, Issue.9
, pp. 6332-6338
-
-
Bykhovski, A.1
Gelmont, B.2
Shur, M.S.3
-
7
-
-
0642275027
-
Spontaneous polarization and piezoelectric constants of III-V nitrides
-
Bernardini F., Fiorentini V., Vanderbilt D. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys Rev B. 56:(16):1997;10024-10027.
-
(1997)
Phys Rev B
, vol.56
, Issue.16
, pp. 10024-10027
-
-
Bernardini, F.1
Fiorentini, V.2
Vanderbilt, D.3
-
8
-
-
0346586797
-
Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors
-
Bykhovski A.D., Shur M.S., Gaska R. Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors. Appl Phys Lett. 73:(24):1998;3577-3579.
-
(1998)
Appl Phys Lett
, vol.73
, Issue.24
, pp. 3577-3579
-
-
Bykhovski, A.D.1
Shur, M.S.2
Gaska, R.3
-
9
-
-
7744225077
-
Vibrational spectroscopy of aluminum nitride
-
McNeil L.E., Grimsditch M., French R.H.J. Vibrational spectroscopy of aluminum nitride. J Am Ceram Soc. 76:(5):1993;1132-1136.
-
(1993)
J Am Ceram Soc
, vol.76
, Issue.5
, pp. 1132-1136
-
-
McNeil, L.E.1
Grimsditch, M.2
French, R.H.J.3
-
10
-
-
84987058195
-
Study of the elastic properties of gallium nitride
-
Savastenko V.A., Sheleg A.U. Study of the elastic properties of gallium nitride. Phys Status Solidi (a). 48:(2):1978;K135-K139.
-
(1978)
Phys Status Solidi (A)
, vol.48
, Issue.2
, pp. 135-K139
-
-
Savastenko, V.A.1
Sheleg, A.U.2
-
11
-
-
0030127795
-
Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by X-ray photoemission spectroscopy
-
Martin G., Botchkarev A., Rockett A., Morkoç H. Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by X-ray photoemission spectroscopy. Appl Phys Lett. 68:(18):1996;2541-2543.
-
(1996)
Appl Phys Lett
, vol.68
, Issue.18
, pp. 2541-2543
-
-
Martin, G.1
Botchkarev, A.2
Rockett, A.3
Morkoç, H.4
-
12
-
-
0031069650
-
GaN/AlGaN heterostructure devices: photodetectors and field-effect transistors
-
Shur MS, Khan MA. GaN/AlGaN heterostructure devices: photodetectors and field-effect transistors. MRS Bull 1997;22(2):44-50.
-
(1997)
MRS Bull
, vol.22
, Issue.2
, pp. 44-50
-
-
Shur, M.S.1
Khan, M.A.2
-
13
-
-
0043005162
-
Film growth of GaN on a c-axis oriented ZnO film using reactive ionized-cluster beam technique and its application to thin film devices
-
Matsubara K., Takagi T. Film growth of GaN on a c-axis oriented ZnO film using reactive ionized-cluster beam technique and its application to thin film devices. Jpn J Appl Phys. 22:1982;511-514.
-
(1982)
Jpn J Appl Phys
, vol.22
, pp. 511-514
-
-
Matsubara, K.1
Takagi, T.2
-
14
-
-
0029748161
-
Electronic and optical properties of the group-III nitrides, their heterostructures and alloys
-
Lambrecht W.R.L., Kim K., Rashkeev S.N., Segall B. Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. Mater Res Soc Symp Proc. 395:1996;455-466.
-
(1996)
Mater Res Soc Symp Proc
, vol.395
, pp. 455-466
-
-
Lambrecht, W.R.L.1
Kim, K.2
Rashkeev, S.N.3
Segall, B.4
-
15
-
-
0030681093
-
Electronic structure of biaxially strained wurtzite crystals GaN and AlN
-
Majewski J.A., Stadele M., Vogl P. Electronic structure of biaxially strained wurtzite crystals GaN and AlN. Mater Res Soc Symp Proc. 449:1997;887-892.
-
(1997)
Mater Res Soc Symp Proc
, vol.449
, pp. 887-892
-
-
Majewski, J.A.1
Stadele, M.2
Vogl, P.3
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