Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1438-1440

  Wu, Y F ^a   Keller, B P ^a   Keller, S ^a   Kapolnek, D ^a   Kozodoy, P ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001561898     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117607     Document Type: Article

References (11)

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