The influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures

Applied Physics Letters

Volumn 72, Issue 1, 1998, Pages 64-66

  Gaska, R ^a   Yang, J W ^a   Bykhovski, A D ^b   Shur, M S ^c   Kaminski, V V ^d   Soloviov, S M ^d  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002928659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120645     Document Type: Article

References (6)

1. R. Gaska, J. W. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminski, and S. M. Soloviov, Appl. Phys. Lett. 71, 3817 (1997).
2. J. S. Shor, L. Bemis, and A. D. Kurtz, IEEE Trans. Electron Devices 41, 661 (1994).
3. Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman, Electron. Lett. 33, 637 (1997).
4. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, Appl. Phys. Lett. 68, 2541 (1996).
5. A. Bykhovski, B. Gelmont, and M. S. Shur J. Appl. Phys. 74, 6734 (1993).
6. F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).