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Volumn , Issue , 2012, Pages

Semiconductor strain metrology: Principles and applications

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EID: 84882625723     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.2174/97816080535991120101     Document Type: Book
Times cited : (2)

References (184)
  • 1
    • 0003980620 scopus 로고
    • Elasticity: Tensor
    • Dyadic and Engineering Approaches, Dover New York
    • P.C. Chou and N.J. Pagano, Elasticity: Tensor, Dyadic and Engineering Approaches, Dover: New York, 1975.
    • (1975)
    • Chou, P.C.1    Pagano, N.J.2
  • 2
    • 0004163805 scopus 로고
    • The Science of Structures and Materials
    • Scientific American Publishers New York
    • J.E. Gordon, The Science of Structures and Materials, Scientific American Publishers: New York, 1988.
    • (1988)
    • Gordon, J.E.1
  • 3
    • 0003847047 scopus 로고
    • Complete Guide to Semiconductor Devices
    • McGraw-Hill New York
    • K.K. Ng, Complete Guide to Semiconductor Devices, McGraw-Hill: New York, 1995.
    • (1995)
    • Ng, K.K.1
  • 4
    • 33846693940 scopus 로고
    • "Piezoresistance effect in germanium and silicon,"P
    • C.S. Smith, "Piezoresistance effect in germanium and silicon,"Phys. Rev., vol. 94, pp. 42-49, Apr. 1954.
    • (1954) hys. Rev. , vol.94 , pp. 42-49
    • Smith, C.S.1
  • 5
    • 84889862190 scopus 로고    scopus 로고
    • Physics of Semiconductor Devices
    • Wiley Interscience New York
    • S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, Wiley Interscience: New York, 2006.
    • (2006)
    • Sze, S.M.1    Ng, K.K.2
  • 6
    • 33749554122 scopus 로고    scopus 로고
    • Foundation of MEMS
    • Prentice Hall Upper Saddle River
    • C. Liu, Foundation of MEMS, Prentice Hall: Upper Saddle River, 2006.
    • (2006)
    • Liu, C.1
  • 7
    • 84882720237 scopus 로고    scopus 로고
    • Ed.
    • Handbook of Optical Metrology Principles and Applications, CRC Press Roca Baton
    • T. Yoshizawa, Ed., Handbook of Optical Metrology Principles and Applications, CRC Press: Roca Baton, 2008.
    • (2008)
    • Yoshizawa, T.1
  • 8
    • 36049057062 scopus 로고
    • "Piezo-electroreflectance in Ge, GaAs and Si,"
    • M. Cardona and F. Pollak, "Piezo-electroreflectance in Ge, GaAs and Si," Phys. Rev., vol. 172, pp. 816-837, Aug. 1966.
    • (1966) Phys. Rev. , vol.172 , pp. 816-837
    • Cardona, M.1    Pollak, F.2
  • 9
    • 36049059646 scopus 로고
    • "Strain effects on optical critical-point structure in diamond type crystals,"
    • E.O. Kane, "Strain effects on optical critical-point structure in diamond type crystals," Phys. Rev., vol. 178, pp. 1368-1398, Mar. 1969.
    • (1969) Phys. Rev. , vol.178 , pp. 1368-1398
    • Kane, E.O.1
  • 10
    • 0001609804 scopus 로고
    • "Modulation spectroscopy under uniaxial stress,"
    • F. Pollak, "Modulation spectroscopy under uniaxial stress," Surf. Sci., vol. 37, pp. 863-895, Jun. 1973.
    • (1973) Surf. Sci. , vol.37 , pp. 863-895
    • Pollak, F.1
  • 11
    • 0003430317 scopus 로고
    • Symmetry and Strain-Induced Effects in Semiconductors
    • Wiley New York
    • G.L. Bir and G.E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors, Wiley: New York, 1974.
    • (1974)
    • Bir, G.L.1    Pikus, G.E.2
  • 12
    • 33646090139 scopus 로고    scopus 로고
    • "Fundamentals of silicon material properties for successful explotation of strain engineering in modern CMOS manufacturing,"
    • P.R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala and R. Wise, "Fundamentals of silicon material properties for successful explotation of strain engineering in modern CMOS manufacturing," IEEE Trans. Electr. Dev., vol. 53, pp. 944-964, May. 2006.
    • (2006) IEEE Trans. Electr. Dev. , vol.53 , pp. 944-964
    • Chidambaram, P.R.1    Bowen, C.2    Chakravarthi, S.3    Machala, C.4    Wise, R.5
  • 13
    • 0009743736 scopus 로고
    • "The effect of pressure and temperature on the resistance of p-n junctions in germanium,"
    • H.H. Hall, J. Bardeen and G.L. Pearson, "The effect of pressure and temperature on the resistance of p-n junctions in germanium," Phys. Rev., vol. 84, pp. 129-132, Oct. 1951.
    • (1951) Phys. Rev. , vol.84 , pp. 129-132
    • Hall, H.H.1    Bardeen, J.2    Pearson, G.L.3
  • 14
    • 0004022851 scopus 로고    scopus 로고
    • Strained Silicon Heterostructures: Materials and Devices
    • IEE London
    • C.K. Maiti, Strained Silicon Heterostructures: Materials and Devices, IEE: London, 2001.
    • (2001)
    • Maiti, C.K.1
  • 15
    • 0003585771 scopus 로고
    • Introduction to Microelectronic Fabrication
    • Addison Wesley Reading
    • R.C. Jaeger, Introduction to Microelectronic Fabrication, Addison Wesley: Reading, 1993.
    • (1993)
    • Jaeger, R.C.1
  • 16
    • 33745905893 scopus 로고
    • "Stress related problems in silicon technology,"
    • S.M. Hu, "Stress related problems in silicon technology," J. Appl. Phys., vol. 70, pp. R53-R80, Sep. 1991.
    • (1991) J. Appl. Phys. , vol.70
    • Hu, S.M.1
  • 18
    • 85056977381 scopus 로고    scopus 로고
    • The Silicon Heterostructure Handbook: Materials
    • Fabrication, Devices, Circuits and Applications ofSiGe and Si Strained-Layer Epitaxy, CRC Press Roca Baton
    • J.D. Cressler, The Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications ofSiGe and Si Strained-Layer Epitaxy, CRC Press: Roca Baton, 2006.
    • (2006)
    • Cressler, J.D.1
  • 19
    • 0003514380 scopus 로고    scopus 로고
    • Fundamentals of Modern VLSI Devices
    • Cambridge University Press: Cambridge
    • Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices. Cambridge University Press: Cambridge, 1998.
    • (1998)
    • Taur, Y.1    Ning, T.H.2
  • 20
    • 27844506950 scopus 로고    scopus 로고
    • "Engineered substrates and their future role in microelectronics,"
    • E.A. Fitzgerald, "Engineered substrates and their future role in microelectronics," Mater. Sci. Eng. B, vol. 124-125, pp. 8-15, Dec. 2005.
    • (2005) Mater. Sci. Eng. B , vol.124-125 , pp. 8-15
    • Fitzgerald, E.A.1
  • 21
    • 19944433396 scopus 로고    scopus 로고
    • "Strained Si, SiGe and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors,"
    • M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie and A. Lochtefeld, "Strained Si, SiGe and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 97, pp. 011101-1-27, Jan. 2005.
    • (2005) J. Appl. Phys. , vol.97 , pp. 011101127
    • Lee, M.L.1    Fitzgerald, E.A.2    Bulsara, M.T.3    Currie, M.T.4    Lochtefeld, A.5
  • 22
    • 10844253101 scopus 로고    scopus 로고
    • "Silicon device scaling to the sub-10-nm regime,"
    • M. Ieong, B. Doris, J. Kedzierski, K. Rim and M. Yang, "Silicon device scaling to the sub-10-nm regime," Science, vol. 306, pp. 2057-2060, Dec. 2004.
    • (2004) Science , vol.306 , pp. 2057-2060
    • Ieong, M.1    Doris, B.2    Kedzierski, J.3    Rim, K.4    Yang, M.5
  • 23
    • 34249948925 scopus 로고    scopus 로고
    • "Physics of strain effects in semiconductors and metal-oxide-semicondutor field-effect transistors,"
    • Y. Sun, S.E. Thompson and T. Nishida, "Physics of strain effects in semiconductors and metal-oxide-semicondutor field-effect transistors," J. Appl. Phys., vol. 101, pp. 104503-1-22, May. 2007.
    • (2007) J. Appl. Phys. , vol.101 , pp. 104503122
    • Sun, Y.1    Thompson, S.E.2    Nishida, T.3
  • 24
    • 33646043420 scopus 로고    scopus 로고
    • "Uniaxial-process-induced strained-Si: extending the CMOS roadmap,"
    • S.E. Thompson, G. Sun, Y.S. Choi and T. Nishida, "Uniaxial-process-induced strained-Si: extending the CMOS roadmap," IEEE Trans. Elect. Dev., vol. 53, pp. 1010-1020, May. 2006.
    • (2006) IEEE Trans. Elect. Dev. , vol.53 , pp. 1010-1020
    • Thompson, S.E.1    Sun, G.2    Choi, Y.S.3    Nishida, T.4
  • 27
    • 33750367831 scopus 로고    scopus 로고
    • "Epitaxial engineered solutions for ITRS scaling roadblocks,"
    • R. Harper, "Epitaxial engineered solutions for ITRS scaling roadblocks," Mater. Sci. Eng. B, vol. 134, pp. 154-158, Oct. 2006.
    • (2006) Mater. Sci. Eng. B , vol.134 , pp. 154-158
    • Harper, R.1
  • 29
    • 33750351803 scopus 로고    scopus 로고
    • "Improved CMOS performance via enhanced carrier mobility,"
    • P.M. Mooney, "Improved CMOS performance via enhanced carrier mobility," Mater. Sci. Eng. B, vol. 134, pp. 133-137, Oct. 2006.
    • (2006) Mater. Sci. Eng. B , vol.134 , pp. 133-137
    • Mooney, P.M.1
  • 31
    • 0034452586 scopus 로고    scopus 로고
    • "Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design,"
    • In: International Electron Devices Meeting Technical Digest
    • S. Ito, H. Namba, K. Yamaguchi, Y. Hirata, K. Ando, S. Koyama, S. Kuroki, N. Ikezawa, T. Suzuki, T. Saitoh and T. Horiuchi, "Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design," In: International Electron Devices Meeting Technical Digest, 2000, pp. 10.7.1-10.7.4.
    • (2000) , pp. 1071-1074
    • Ito, S.1    Namba, H.2    Yamaguchi, K.3    Hirata, Y.4    Ando, K.5    Koyama, S.6    Kuroki, S.7    Ikezawa, N.8    Suzuki, T.9    Saitoh, T.10    Horiuchi, T.11
  • 32
    • 84882572789 scopus 로고    scopus 로고
    • "Novel locally strained channel technique for high performance 55nm CMOS,"
    • In: International Electron Devices Meeting Technical Digest
    • K. Ota, K. Sugihara, H. Sayama, T. Uchida, H. Oda, T. Eimori, H. Morimoto and Y. Inoune, "Novel locally strained channel technique for high performance 55nm CMOS," In: International Electron Devices Meeting Technical Digest, 2002, pp. 2.2.1-2.2.4
    • (2002) , pp. 221-224
    • Ota, K.1    Sugihara, K.2    Sayama, H.3    Uchida, T.4    Oda, H.5    Eimori, T.6    Morimoto, H.7    Inoune, Y.8
  • 33
    • 4544382132 scopus 로고    scopus 로고
    • "Stress memorization technique by selectively strained-nitride capping for sub- 65nm high-performance strained-Si device application,"
    • In: Symposium on VLSI Tehnology Digest of Technical Papers
    • C.H. Chen, T.L. Lee, T.H. Hou, C.L. Chen, C.C. Chen, J.W. Hsu, K.L. Cheng, Y.H. Chiu, H.J. Tao, T. Jin, C.H. Diaz, S.C. Chen and M.S. Liang, "Stress memorization technique by selectively strained-nitride capping for sub- 65nm high-performance strained-Si device application," In: Symposium on VLSI Tehnology Digest of Technical Papers, 2004, pp. 56-57.
    • (2004) , pp. 56-57
    • Chen, C.H.1    Lee, T.L.2    Hou, T.H.3    Chen, C.L.4    Chen, C.C.5    Hsu, J.W.6    Cheng, K.L.7    Chiu, Y.H.8    Tao, H.J.9    Jin, T.10    Diaz, C.H.11    Chen, S.C.12    Liang, M.S.13
  • 35
    • 84878932842 scopus 로고    scopus 로고
    • International roadmap for semiconductors
    • Update online Available: Accessed March 7, 2011
    • (2010)
  • 36
    • 0004205669 scopus 로고
    • Polycrystalline Silicon for Integrated Circuit Applications
    • Kluwer Academic New York
    • T.I. Kamins, Polycrystalline Silicon for Integrated Circuit Applications, Kluwer Academic: New York, 1988.
    • (1988)
    • Kamins, T.I.1
  • 37
    • 84882589622 scopus 로고    scopus 로고
    • "The impact of nano-sized dimensions on characterization and metrology,"
    • In International Conference on Frontiers of Characterization and Metrology for ULSI Technology
    • A.C. Diebold, "The impact of nano-sized dimensions on characterization and metrology," In: International Conference on Frontiers of Characterization and Metrology for ULSI Technology, 2007.
    • (2007)
    • Diebold, A.C.1
  • 38
    • 84882639705 scopus 로고    scopus 로고
    • Mechanical Properties of Materials
    • Cambridge University Press Cambridge
    • M.A. Meyers and K.K. Chawla, Mechanical Properties of Materials, Cambridge University Press: Cambridge, 2009.
    • (2009)
    • Meyers, M.A.1    Chawla, K.K.2
  • 39
    • 84947322991 scopus 로고    scopus 로고
    • Properties of Group-IV
    • III-V and II-VI Semiconductor, Wiley Chichester
    • S. Adachi, Properties of Group-IV, III-V and II-VI Semiconductor, Wiley: Chichester, 2005.
    • (2005)
    • Adachi, S.1
  • 40
    • 0004203040 scopus 로고
    • The Electrical Engineering Handbook
    • CRC Press Boca Raton
    • R.C. Dorf, The Electrical Engineering Handbook, CRC Press: Boca Raton, 1995.
    • (1995)
    • Dorf, R.C.1
  • 41
    • 0003470014 scopus 로고
    • Solid State Physics
    • Saunders College Philadelphia
    • N.W. Ashcroft and N.D. Mermin, Solid State Physics, Saunders College: Philadelphia, 1976.
    • (1976)
    • Ashcroft, N.W.1    Mermin, N.D.2
  • 42
    • 0003406742 scopus 로고    scopus 로고
    • Introduction to Solid State Physics
    • seventh edition, Wiley New York
    • C. Kittel, Introduction to Solid State Physics, seventh edition, Wiley: New York, 1996.
    • (1996)
    • Kittel, C.1
  • 43
    • 0003443049 scopus 로고
    • Optical Processes in Semiconductors
    • Dover New York
    • J.I Pankove, Optical Processes in Semiconductors, Dover: New York, 1971.
    • (1971)
    • Pankove J.I1
  • 44
    • 35748985864 scopus 로고    scopus 로고
    • "Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron X-ray scattering"
    • Nov. 2007
    • T.K.S. Wong, Y. Gong, P. Yang and C.M. Ng, "Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron X-ray scattering," Semicond. Sci. Technol., vol. 22, pp. 1232-1239, Nov. 2007.
    • Semicond. Sci. Technol. , vol.22 , pp. 1232-1239
    • Wong, T.K.S.1    Gong, Y.2    Yang, P.3    Ng, C.M.4
  • 45
    • 33745281198 scopus 로고    scopus 로고
    • "Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry"
    • Aug. 2006
    • C.J Vineis, M. Erdtmann and C.W. Leitz, "Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry," Thin Solid Films, vol. 513, pp. 78-13, Aug. 2006.
    • Thin Solid Films , vol.513 , pp. 78-13
    • Vineis C.J1    Erdtmann, M.2    Leitz, C.W.3
  • 48
    • 19944433396 scopus 로고    scopus 로고
    • "Strained Si Sige and Ge channels for high mobility metal-oxide-semiconductor field-effect transistosr."
    • M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie and A. Lochtefeld, "Strained Si, SiGe and Ge channels for high mobility metal-oxide-semiconductor field-effect transistosr." J. Appl. Phys., vol. 97, 011101-1-27, Jan. 2005.
    • (2005) J. Appl. Phys. , vol.97 , pp. 011101127
    • Lee, M.L.1    Fitzgerald, E.A.2    Bulsara, M.T.3    Currie, M.T.4    Lochtefeld, A.5
  • 49
    • 34249948925 scopus 로고    scopus 로고
    • "Physics of strain effects in semiconductors and metal-oxide-semicondutor field-effect transistors"
    • May. 2007
    • Y. Sun, S.E. Thompson and T. Nishida, "Physics of strain effects in semiconductors and metal-oxide-semicondutor field-effect transistors," J. Appl. Phys., vol. 101, pp. 104503-1-22, May. 2007.
    • J. Appl. Phys. , vol.101 , pp. 104503122
    • Sun, Y.1    Thompson, S.E.2    Nishida, T.3
  • 52
    • 0003684325 scopus 로고    scopus 로고
    • Spectroscopic Ellipsometry and Reflectometry A Users Guide
    • Wiley: New York
    • H.G. Tompkins and W.A. McGahan, Spectroscopic Ellipsometry and Reflectometry A Users Guide, Wiley: New York, 1999.
    • (1999)
    • Tompkins, H.G.1    Mcgahan, W.A.2
  • 53
    • 0000339038 scopus 로고    scopus 로고
    • "Elasto-optical constants of Si"
    • Apr. 1993
    • P. Etchegion, J. Kircher and M. Cardona, "Elasto-optical constants of Si," Phys. Rev. B, vol. 47, pp. 10292-10303, Apr. 1993.
    • Phys. Rev. B , vol.47 , pp. 10292-10303
    • Etchegion, P.1    Kircher, J.2    Cardona, M.3
  • 54
    • 0142166825 scopus 로고    scopus 로고
    • "Temperature dependence of the dielectric function and interband critical points in silicon"
    • Sep. 1987
    • P. Lautenschlager, M. Garriga, L. Vina and M. Cardona, "Temperature dependence of the dielectric function and interband critical points in silicon," Phys. Rev. B, vol. 36, pp. 4821-4830, Sep. 1987.
    • Phys. Rev. B , vol.36 , pp. 4821-4830
    • Lautenschlager, P.1    Garriga, M.2    Vina, L.3    Cardona, M.4
  • 55
    • 0347227709 scopus 로고    scopus 로고
    • "Dielectric function of biaxially strained silicon layer"
    • May. 1996
    • H. Lee and E.D. Jones, "Dielectric function of biaxially strained silicon layer," Appl. Phys. Lett., vol. 68, pp. 3153- 3155, May. 1996.
    • Appl. Phys. Lett. , vol.68 , pp. 3153-3155
    • Lee, H.1    Jones, E.D.2
  • 56
    • 0003760432 scopus 로고    scopus 로고
    • Properties of Crystalline Silicon
    • INSPEC: London
    • R. Hull, Ed., Properties of Crystalline Silicon, INSPEC: London, 1997.
    • (1997)
    • Hull, R.1
  • 57
    • 0000489793 scopus 로고    scopus 로고
    • "Piezo-optical response of Ge in the visible-uv range"
    • May. 1992
    • P. Etchegoin, J. Kicher, M. Cardona and C. Grein, "Piezo-optical response of Ge in the visible-uv range," Phys. Rev. B, vol. 45, pp. 11721-11735, May. 1992.
    • Phys. Rev. B , vol.45 , pp. 11721-11735
    • Etchegoin, P.1    Kicher, J.2    Cardona, M.3    Grein, C.4
  • 58
    • 0347059677 scopus 로고
    • Landbolt-Bornstein Semiconductors: Group IV Eelements and III-V Ccompound
    • Springer: Berlin
    • O. Madeulung, M. Schultz and H. Weiss, Landbolt-Bornstein Semiconductors: Group IV Eelements and III-V Ccompound, Springer: Berlin, 1982.
    • (1982)
    • Madeulung, O.1    Schultz, M.2    Weiss, H.3
  • 59
    • 34247270178 scopus 로고    scopus 로고
    • "Dielectric functions elasto-optic effects and critical-point parameters of biaxialy stressed Si1-yCy alloys on Si (001)"
    • Jan. 2007
    • S. Zollner, J.P. Liu, P. Zaumseil, H.J. Osten and A.A. Demkov, "Dielectric functions, elasto-optic effects, and critical-point parameters of biaxialy stressed Si1-yCy alloys on Si (001)," Semicond. Sci. Technol., vol. 22, pp. S13- S20, Jan. 2007.
    • Semicond. Sci. Technol. , vol.22
    • Zollner, S.1    Liu, J.P.2    Zaumseil, P.3    Osten, H.J.4    Demkov, A.A.5
  • 60
    • 21544456592 scopus 로고    scopus 로고
    • "Dielectric function spectra of strained and relaxed Si1-xGex alloys (x = 0 - 0.25)"
    • May. 1994
    • C. Pickering and R.T. Carline, "Dielectric function spectra of strained and relaxed Si1-xGex alloys (x = 0 - 0.25)," J. Appl. Phys., vol. 75, pp. 4642-4647, May. 1994.
    • J. Appl. Phys. , vol.75 , pp. 4642-4647
    • Pickering, C.1    Carline, R.T.2
  • 61
    • 1342318416 scopus 로고    scopus 로고
    • "Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth"
    • Feb. 1998
    • B. Johs, C.M. Herzinger, J.H. Dinan, A. Cornfeld and J.D. Benson, "Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth," Thin Solid Films, vol. 313-314, pp. 137-142, Feb. 1998.
    • Thin Solid Films , vol.313-314 , pp. 137-142
    • Johs, B.1    Herzinger, C.M.2    Dinan, J.H.3    Cornfeld, A.4    Benson, J.D.5
  • 62
    • 0142166825 scopus 로고    scopus 로고
    • "Temperature dependence of the dielectric function and interband critical points in silicon"
    • Sep. 1992
    • P. Lautenschlager, M. Garriga, L. Vina and M. Cardona, "Temperature dependence of the dielectric function and interband critical points in silicon." Phys. Rev. B, vol. 36, pp. 4821-4830, Sep. 1992.
    • Phys. Rev. B , vol.36 , pp. 4821-4830
    • Lautenschlager, P.1    Garriga, M.2    Vina, L.3    Cardona, M.4
  • 64
    • 0003443049 scopus 로고
    • Optical Processes in Semiconductors
    • Dover: New York
    • J.I. Pankove, Optical Processes in Semiconductors, Dover: New York, 1971.
    • (1971)
    • Pankove, J.I.1
  • 65
    • 0027677195 scopus 로고    scopus 로고
    • "Modulation spectroscopy of semiconductors: bulk/thin film microstructures, surfaces/interfaces and devices"
    • Sep. 1993
    • F.H. Pollak and H. Shen, "Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices," Mater. Sci. Eng. R, vol. 10, pp. 275-374, Sep. 1993.
    • Mater. Sci. Eng. R , vol.10 , pp. 275-374
    • Pollak, F.H.1    Shen, H.2
  • 67
    • 26744464488 scopus 로고    scopus 로고
    • "Third derivative modulation spectroscopy with low-field electroreflectance"
    • Jun. 1973
    • D.E. Aspnes, "Third derivative modulation spectroscopy with low-field electroreflectance," Surf. Sci., vol. 37, pp. 418-442, Jun. 1973.
    • Surf. Sci. , vol.37 , pp. 418-442
    • Aspnes, D.E.1
  • 68
    • 35348901966 scopus 로고    scopus 로고
    • "Photo-Reflectance characterization of nanometer scale active layers in Si,"
    • In: Frontiers of characterization and metrology for nanoelectronics
    • W. Chism, D. Pham and J. Allgair, "Photo-Reflectance characterization of nanometer scale active layers in Si," In: Frontiers of characterization and metrology for nanoelectronics, 2007, pp. 64-68.
    • (2007) , pp. 64-68
    • Chism, W.1    Pham, D.2    Allgair, J.3
  • 69
    • 77952340542 scopus 로고    scopus 로고
    • 'A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal"
    • Apr. 2010
    • Q. Li, H.H. Tan and C. Jagadish, 'A new optical front-end compensation technique for suppression of spurious signal in photoreflectance spectroscopy using an antiphase signal," Rev. Sci. Instrum., vol. 81, pp. 0431021-4, Apr. 2010.
    • Rev. Sci. Instrum. , vol.81 , pp. 0431021-0431024
    • Li, Q.1    Tan, H.H.2    Jagadish, C.3
  • 74
    • 84872703724 scopus 로고    scopus 로고
    • Fullerenes and Nanotechnology
    • RSC publishing: Cambridge
    • M.S. Amer, Raman Spectroscopy, Fullerenes and Nanotechnology, RSC publishing: Cambridge, 2010.
    • (2010)
    • Amer, M.S.1    Raman, S.2
  • 75
    • 0004069038 scopus 로고
    • Introduction to Instrumental Analysis
    • Mc-Graw Hill: New York
    • R.D. Braun, Introduction to Instrumental Analysis, Mc-Graw Hill: New York, 1987.
    • (1987)
    • Braun, R.D.1
  • 76
    • 58549096523 scopus 로고    scopus 로고
    • "High resolution probing of multi wall carbon nanotubes by tip enhanced Raman spectroscopy in gap-mode"
    • Feb. 2009
    • G. Picardi, M. Chaigneau and R. Ossikovski, "High resolution probing of multi wall carbon nanotubes by tip enhanced Raman spectroscopy in gap-mode," Chem. Phys. Lett., vol. 469, pp. 161-165, Feb. 2009.
    • Chem. Phys. Lett. , vol.469 , pp. 161-165
    • Picardi, G.1    Chaigneau, M.2    Ossikovski, R.3
  • 78
    • 0030081591 scopus 로고    scopus 로고
    • "Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits"
    • Feb. 1996
    • I. De Wolf, "Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits," Semicond. Sci. Technol., vol. 11, pp. 139-154, Feb. 1996.
    • Semicond. Sci. Technol. , vol.11 , pp. 139-154
    • De Wolf, I.1
  • 79
    • 0003406742 scopus 로고    scopus 로고
    • Introduction to Solid State Physics
    • Wiley: New York
    • C. Kittel, Introduction to Solid State Physics, Wiley: New York, 1996.
    • (1996)
    • Kittel, C.1
  • 80
    • 0000736871 scopus 로고    scopus 로고
    • "Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment"
    • May. 1996
    • I. De Wolf, H.E. Maes and S.K. Jones, "Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment," J. Appl. Phys., vol. 79, pp. 7148-7156, May. 1996.
    • J. Appl. Phys. , vol.79 , pp. 7148-7156
    • De Wolf, I.1    Maes, H.E.2    Jones, S.K.3
  • 81
    • 35748985864 scopus 로고    scopus 로고
    • "Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering"
    • Nov. 2007
    • T.K.S. Wong, Y. Gong, P. Yang and C.M. Ng, "Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering," Semicond. Sci. Technol., vol. 22, pp. 1232-1239, Nov. 2007.
    • Semicond. Sci. Technol. , vol.22 , pp. 1232-1239
    • Wong, T.K.S.1    Gong, Y.2    Yang, P.3    Ng, C.M.4
  • 82
    • 33750707298 scopus 로고    scopus 로고
    • "Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates"
    • Dec. 2006
    • T.S. Perova, K. Lyutovich, E. Kasper, A. Waldron, M. Oehma and R.A. Moore, "Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates," Mater. Sci. Eng. B, vol. 135, pp. 192-194, Dec. 2006.
    • Mater. Sci. Eng. B , vol.135 , pp. 192-194
    • Perova, T.S.1    Lyutovich, K.2    Kasper, E.3    Waldron, A.4    Oehma, M.5    Moore, R.A.6
  • 84
    • 4344561556 scopus 로고    scopus 로고
    • "Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature"
    • Sep. 2004
    • R.C. Teixera, I. Doi, M.B.P. Zakia, J.A. Diniz and J.W. Swart, "Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature," Mater. Sci. Eng. B, vol. 112, pp160-164, Sep. 2004.
    • Mater. Sci. Eng. B , vol.112 , pp. 160-164
    • Teixera, R.C.1    Doi, I.2    Zakia, M.B.P.3    Diniz, J.A.4    Swart, J.W.5
  • 85
    • 13244252566 scopus 로고    scopus 로고
    • "Characterization of strained Si structures using SIMS and visible Raman"
    • Feb. 2005
    • G.G. Goodman, V. Pajcini, S.P. Smith and P.B. Merrill, "Characterization of strained Si structures using SIMS and visible Raman," Mater. Sci. Semicond. Proc., vol. 8, pp. 255-260, Feb. 2005.
    • Mater. Sci. Semicond. Proc. , vol.8 , pp. 255-260
    • Goodman, G.G.1    Pajcini, V.2    Smith, S.P.3    Merrill, P.B.4
  • 86
    • 84918245251 scopus 로고    scopus 로고
    • "The Raman effect in crystals"
    • Oct. 1964
    • R. Loudon, "The Raman effect in crystals," Adv. Phys., vol. 13, pp. 423-482, Oct. 1964.
    • Adv. Phys. , vol.13 , pp. 423-482
    • Loudon, R.1
  • 87
    • 0001648741 scopus 로고    scopus 로고
    • "Measurement of stresses using fluorescence in an optical microprobe: stresses around indentations in a chromium-doped sapphire"
    • Nov. 1990
    • S.E. Molis and D.R. Clarke, "Measurement of stresses using fluorescence in an optical microprobe: stresses around indentations in a chromium-doped sapphire," J. Am. Ceram. Soc., vol., 73, pp. 3189-3194, Nov. 1990.
    • J. Am. Ceram. Soc. , vol.73 , pp. 3189-3194
    • Molis, S.E.1    Clarke, D.R.2
  • 88
    • 0025722454 scopus 로고    scopus 로고
    • "Cathodoluminescence measurement of strained alumina single crystals"
    • Mar. 1991
    • C.P. Ostertag, L.H. Robins and L.P. Cook, "Cathodoluminescence measurement of strained alumina single crystals," J. Eur. Ceram. Soc., vol. 7, pp. 109-116, Mar. 1991.
    • J. Eur. Ceram. Soc. , vol.7 , pp. 109-116
    • Ostertag, C.P.1    Robins, L.H.2    Cook, L.P.3
  • 89
    • 84954167226 scopus 로고    scopus 로고
    • Luminescent materials and applications
    • John Wiley and Sons, Ltd.: Chichester
    • A. Kitai, Luminescent materials and applications. John Wiley & Sons, Ltd.: Chichester, 2008.
    • (2008)
    • Kitai, A.1
  • 90
    • 42749090003 scopus 로고    scopus 로고
    • "Piezospectroscopic measurement of the stress field around an indentation crack tip in ruby using SEM cathodoluminescence"
    • Jul. 2008
    • R.I. Todd, D. Stowe, S. Galloway, D. Barnes and P.R. Wilshaw, "Piezospectroscopic measurement of the stress field around an indentation crack tip in ruby using SEM cathodoluminescence," J. Eur. Cer. Soc., vol. 28, pp. 2049-2055, Jul. 2008.
    • J. Eur. Cer. Soc. , vol.28 , pp. 2049-2055
    • Todd, R.I.1    Stowe, D.2    Galloway, S.3    Barnes, D.4    Wilshaw, P.R.5
  • 91
    • 11544321141 scopus 로고    scopus 로고
    • "Cathodoluminescence scanning electron microscopy of semiconductors"
    • Feb. 1986
    • B.G. Yaccobi and D.B. Holt, "Cathodoluminescence scanning electron microscopy of semiconductors," J. Appl. Phys., vol. 58, pp. R1-R24, Feb. 1986.
    • J. Appl. Phys. , vol.58
    • Yaccobi, B.G.1    Holt, D.B.2
  • 92
    • 0017935789 scopus 로고    scopus 로고
    • "Spectroscopic technique for the measurement of residual stress in sintered Al2O3"
    • Feb. 1978
    • L. Grabner, "Spectroscopic technique for the measurement of residual stress in sintered Al2O3," J. Appl. Phys., vol. 49, pp. 580-583, Feb. 1978.
    • J. Appl. Phys. , vol.49 , pp. 580-583
    • Grabner, L.1
  • 94
    • 0344034251 scopus 로고    scopus 로고
    • "Piezo-spectroscopic assessment of nanoscopic residual stresses in Er3+-doped optical fibres"
    • Nov. 2003
    • G. Pezzotti, A. Leto, K. Tanaka and O. Sbaizero, "Piezo-spectroscopic assessment of nanoscopic residual stresses in Er3+-doped optical fibres," J. Phys. Cond. Mat., vol. 15, pp. 7687-7695, Nov. 2003.
    • J. Phys. Cond. Mat. , vol.15 , pp. 7687-7695
    • Pezzotti, G.1    Leto, A.2    Tanaka, K.3    Sbaizero, O.4
  • 95
    • 84882730927 scopus 로고    scopus 로고
    • "Nanometre-scale stress detection of patterned ILD using cathodoluminescence piezo-spectroscopic assessments in a nano-stress microscope,"
    • In: Advanced metallization conference Asian session
    • M. Kodera, S. Uekusa, S. Kakinuma, Y. Saijo, A. Fukunaga, M. Tsujimura and G. Pezzotti, "Nanometre-scale stress detection of patterned ILD using cathodoluminescence piezo-spectroscopic assessments in a nano-stress microscope," In: Advanced metallization conference Asian session, 2005, pp. 58-59.
    • (2005) , pp. 58-59
    • Kodera, M.1    Uekusa, S.2    Kakinuma, S.3    Saijo, Y.4    Fukunaga, A.5    Tsujimura, M.6    Pezzotti, G.7
  • 96
    • 33750502638 scopus 로고    scopus 로고
    • "Stress dependence of the near-band-gap cathodoluminescence spectrum of GaN determined by spatially resolved indentation method"
    • Oct. 2006
    • A.P. Porporati, Y. Tanaka, A. Matsutani, W. Zhu and G. Pezzotti, "Stress dependence of the near-band-gap cathodoluminescence spectrum of GaN determined by spatially resolved indentation method," J. Appl. Phys. vol., 100, pp. 083515-1-7, Oct. 2006.
    • J. Appl. Phys. vol. , vol.100 , pp. 08351517
    • Porporati, A.P.1    Tanaka, Y.2    Matsutani, A.3    Zhu, W.4    Pezzotti, G.5
  • 97
    • 0001165142 scopus 로고    scopus 로고
    • "Model line-shape analysis for the ruby R lines used for pressure measurement"
    • Jan. 1985
    • R.G. Munro, G.J. Piermarini, S. Block and W. B. Holzapfel, "Model line-shape analysis for the ruby R lines used for pressure measurement," J. Appl. Phys. vol. 57, pp. 165169 Jan. 1985.
    • J. Appl. Phys. , vol.57 , pp. 165169
    • Munro, R.G.1    Piermarini, G.J.2    Block, S.3    Holzapfel, W.B.4
  • 98
    • 0004071496 scopus 로고    scopus 로고
    • Semiconductor material and device characterization
    • Wiley-Interscience: Hoboken
    • D.K. Schroder, Semiconductor material and device characterization. Wiley-Interscience: Hoboken, 2006.
    • (2006)
    • Schroder, D.K.1
  • 99
    • 1142292404 scopus 로고    scopus 로고
    • "Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation"
    • Mar. 2004
    • K. Usuda, T. Mizuno, T. Tezuka, N. Sugiyama, Y. Moriyama, S. Nakahari and S. Takagi, "Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation," Appl. Surf. Sci., vol. 224, pp. 113-116, Mar. 2004.
    • Appl. Surf. Sci. , vol.224 , pp. 113-116
    • Usuda, K.1    Mizuno, T.2    Tezuka, T.3    Sugiyama, N.4    Moriyama, Y.5    Nakahari, S.6    Takagi, S.7
  • 100
    • 0003881633 scopus 로고    scopus 로고
    • Principles of electrical engineering materials and devices
    • Mc-Graw Hill: Boston
    • S.O. Kasap, Principles of electrical engineering materials and devices. Mc-Graw Hill: Boston, 2000.
    • (2000)
    • Kasap, S.O.1
  • 101
    • 0003464779 scopus 로고
    • Electron Microdiffraction
    • Plenum: New York
    • J.C.H. Spence and J.M. Zuo, Electron Microdiffraction. Plenum: New York, 1992.
    • (1992)
    • Spence, J.C.H.1    Zuo, J.M.2
  • 102
    • 0142154781 scopus 로고    scopus 로고
    • "Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction"
    • In: Proceedings of International Electron Device Meeting
    • K. Usuda, T. Numata, T. Tezuka, N. Sugiyama, Y. Moriyama, S. Nakaharai and S. Takagi, "Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction," In: Proceedings of International Electron Device Meeting, 2003, pp. 138-139.
    • Usuda, K.1    Numata, T.2    Tezuka, T.3    Sugiyama, N.4    Moriyama, Y.5    Nakaharai, S.6    Takagi, S.7
  • 103
    • 27844598730 scopus 로고    scopus 로고
    • "Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)"
    • Dec. 2005
    • K. Usuda, T. Numata, T. Irisawa, N. Hirashita and S. Takagi, "Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)," Mater. Sci. Eng. B, vol. 124-125, pp. 143-147, Dec. 2005.
    • Mater. Sci. Eng. B , vol.124-125 , pp. 143-147
    • Usuda, K.1    Numata, T.2    Irisawa, T.3    Hirashita, N.4    Takagi, S.5
  • 104
    • 0008163856 scopus 로고
    • Fundamentals of solid state physics
    • Wiley: New York
    • J.R. Christman, Fundamentals of solid state physics. Wiley: New York, 1988.
    • (1988)
    • Christman, J.R.1
  • 105
    • 0027543328 scopus 로고    scopus 로고
    • "Measurement of strain in locally oxidized silicon using convergent-beam electron diffraction"
    • Feb. 1993
    • K. Kimoto, K. Usami, H. Sakata and M. Tanaka, "Measurement of strain in locally oxidized silicon using convergent-beam electron diffraction," Jpn, J. Appl. Phys., vol. 32, pp. L211-L213, Feb. 1993.
    • Jpn, J. Appl. Phys. , vol.32
    • Kimoto, K.1    Usami, K.2    Sakata, H.3    Tanaka, M.4
  • 106
    • 1942540699 scopus 로고    scopus 로고
    • "High-resolution strain measurement in shallow trench isolation structures using dynamic electron diffraction"
    • Mar. 2004
    • M. Kim, J.M. Zuo and G.S. Park, "High-resolution strain measurement in shallow trench isolation structures using dynamic electron diffraction," Appl. Phys. Lett., vol. 84, pp. 2181-2183, Mar. 2004.
    • Appl. Phys. Lett. , vol.84 , pp. 2181-2183
    • Kim, M.1    Zuo, J.M.2    Park, G.S.3
  • 108
    • 33846949189 scopus 로고    scopus 로고
    • "Strain measurement by transmission electron microscopy"
    • Jan. 2006. [Online] Available, [Accessed Mar. 7 2011]
    • B. Foran, "Strain measurement by transmission electron microscopy," Future Fab Intl. vol. 20, Jan. 2006. [Online] Available: www.future-fab.com. [Accessed Mar. 7 2011].
    • Future Fab Intl. , vol.20
    • Foran, B.1
  • 109
    • 4043091241 scopus 로고    scopus 로고
    • "Strain measurement by convergent-beam electron diffraction: the importance of stress relaxation in lamella preparations"
    • Jul. 2004
    • L. Clement, R. Pantel, L.F. Tz. Kwakman and J.L. Rouviere, "Strain measurement by convergent-beam electron diffraction: the importance of stress relaxation in lamella preparations," Appl. Phys. Lett., vol. 85, pp. 651-653, Jul. 2004.
    • Appl. Phys. Lett. , vol.85 , pp. 651-653
    • Clement, L.1    Pantel, R.2    Kwakman, L.F.Tz.3    Rouviere, J.L.4
  • 111
    • 0032620923 scopus 로고    scopus 로고
    • "Two-dimensional mapping of the electrostatic potential in transistors by electron holography"
    • Mar. 1999
    • W.D. Rau, P. Schwander, F.H. Baumann, W. Hoppner and A. Ourmazd, "Two-dimensional mapping of the electrostatic potential in transistors by electron holography," Phys. Rev. Lett., vol. 82, pp. 2614-2617, Mar. 1999.
    • Phys. Rev. Lett. , vol.82 , pp. 2614-2617
    • Rau, W.D.1    Schwander, P.2    Baumann, F.H.3    Hoppner, W.4    Ourmazd, A.5
  • 113
    • 54749105097 scopus 로고    scopus 로고
    • "Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations"
    • Sep. 2008
    • D. Cooper, C. Alliot, R. Turche, J-P. Barnes, J-M. Hartman and F. Bertin, "Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations," J. Appl. Phys., vol. 104, 064513-1-8, Sep. 2008.
    • J. Appl. Phys. , vol.104 , pp. 51318
    • Cooper, D.1    Alliot, C.2    Turche, R.3    Barnes, J-P.4    Hartman, J-M.5    Bertin, F.6
  • 114
    • 68949132758 scopus 로고    scopus 로고
    • "Quantitative observation of magnetic flux distribution in new magnetic films for future high density recording media"
    • Aug. 2009
    • A. Masseboeuf, A. Marty, P. Bayle-Guillemaud, C. Gatel and E. Snoeck, "Quantitative observation of magnetic flux distribution in new magnetic films for future high density recording media," Nano. Lett., vol. 9, pp. 2803-2806, Aug. 2009.
    • Nano. Lett. , vol.9 , pp. 2803-2806
    • Masseboeuf, A.1    Marty, A.2    Bayle-Guillemaud, P.3    Gatel, C.4    Snoeck, E.5
  • 115
    • 45749105563 scopus 로고    scopus 로고
    • "Nanoscale holographic interferometry for strain measurement in electronic devices"
    • Jun. 2008
    • M. Hytch, F. Houdellier, F. Hue and E. Snoeck, "Nanoscale holographic interferometry for strain measurement in electronic devices," Nature, vol. 453, pp. 1086-1089, Jun. 2008.
    • Nature , vol.453 , pp. 1086-1089
    • Hytch, M.1    Houdellier, F.2    Hue, F.3    Snoeck, E.4
  • 116
    • 0003699033 scopus 로고
    • The Feynman lectures on physics vol
    • III. Addison Wesley: Reading
    • R.P. Feynman, R.B. Leighton and M. Sands, The Feynman lectures on physics vol. III. Addison Wesley: Reading, 1989.
    • (1989)
    • Feynman, R.P.1    Leighton, R.B.2    Sands, M.3
  • 117
    • 0003907198 scopus 로고    scopus 로고
    • Introduction to electron holography
    • Kluwer Academic/Plenum: New York
    • E. Volkl, Introduction to electron holography. Kluwer Academic/Plenum: New York, 1999.
    • (1999)
    • Volkl, E.1
  • 118
    • 0037519622 scopus 로고    scopus 로고
    • "Quantitative measurement of displacement and strain fields from HREM micrographs"
    • Aug. 1998
    • M.J. Hytch, E. Snoeck and R. Kilaas, "Quantitative measurement of displacement and strain fields from HREM micrographs," Ultramicroscopy, vol. 74, pp. 131-146, Aug. 1998.
    • Ultramicroscopy , vol.74 , pp. 131-146
    • Hytch, M.J.1    Snoeck, E.2    Kilaas, R.3
  • 119
    • 27744496180 scopus 로고    scopus 로고
    • "Theoretical discussions on the geometrical phase analysis"
    • Dec. 2005
    • J.L. Rouviere and E. Sarigianidou, "Theoretical discussions on the geometrical phase analysis," Ultramicroscopy, vol. 106, pp. 1-17, Dec. 2005.
    • Ultramicroscopy , vol.106 , pp. 1-17
    • Rouviere, J.L.1    Sarigianidou, E.2
  • 120
    • 27844466675 scopus 로고    scopus 로고
    • "Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate"
    • Dec. 2005
    • N. Cherkashin, M.J. Hytch, E. Snoeck, A. Claverie, J.M. Hartmann and Y. Bogumilowicz, "Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate," Mater. Sci. Eng. B, vol. 124-125, pp. 118-122, Dec. 2005.
    • Mater. Sci. Eng. B , vol.124-125 , pp. 118-122
    • Cherkashin, N.1    Hytch, M.J.2    Snoeck, E.3    Claverie, A.4    Hartmann, J.M.5    Bogumilowicz, Y.6
  • 122
    • 42449161474 scopus 로고    scopus 로고
    • "Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy"
    • Apr. 2008
    • F. Hue, M. Hytch, H. Bender, F. Houdellier and A. Claverie, "Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy," Phys. Rev. Lett., vol. 100, pp. 156602-1-4, Apr. 2008.
    • Phys. Rev. Lett. , vol.100 , pp. 15660214
    • Hue, F.1    Hytch, M.2    Bender, H.3    Houdellier, F.4    Claverie, A.5
  • 123
    • 68349154413 scopus 로고    scopus 로고
    • "Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution"
    • Aug. 2009
    • D. Cooper, J.P. Barnes, J.-M. Hartmann, A. Beche and J.-L. Rouviere, "Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution," Appl. Phys. Lett., vol. 95, pp. 0535011-3, Aug. 2009.
    • Appl. Phys. Lett. , vol.95 , pp. 0535011-3
    • Cooper, D.1    Barnes, J.P.2    Hartmann, J.-M.3    Beche, A.4    Rouviere, J.-L.5
  • 124
    • 0004072238 scopus 로고    scopus 로고
    • Light and electron microscopy
    • Cambridge University Press: Cambridge
    • E.M. Slayte and H.S. Slayter, Light and electron microscopy. Cambridge University Press: Cambridge, 1997.
    • (1997)
    • Slayte, E.M.1    Slayter, H.S.2
  • 125
    • 3042539529 scopus 로고    scopus 로고
    • Nanophotonics
    • John Wiley and Sons, Inc.: New York
    • P.N. Prasad, Nanophotonics. John Wiley & Sons Inc.: New York, 2004.
    • (2004)
    • Prasad, P.N.1
  • 126
    • 35348822472 scopus 로고    scopus 로고
    • "Review of NSOM microscopy for materials,"
    • In: Frontiers of Characterization and Metrology for Nanoelectronics
    • Y. De Wilde and P.-A. Lemoine, "Review of NSOM microscopy for materials," In: Frontiers of Characterization and Metrology for Nanoelectronics, 2007, pp. 43-51.
    • (2007) , pp. 43-51
    • De Wilde, Y.1    Lemoine, P.-A.2
  • 127
    • 0032026928 scopus 로고    scopus 로고
    • "Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy,"
    • Mar
    • S. Webster, D.N. Batchelder, D.A. Smith, "Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy," Appl. Phys. Lett., vol. 72, pp. 1478-1481, Mar. 1998.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1478-1481
    • Webster, S.1    Batchelder, D.N.2    Smith, D.A.3
  • 129
    • 26444442175 scopus 로고    scopus 로고
    • "The new "p-n" junction: plasmonics enables photonic access to the nanoworld,"
    • May
    • H.A. Atwater, S. Maier, A. Polman, J.A. Dionne and L. Sweatlock, "The new "p-n" junction: plasmonics enables photonic access to the nanoworld," MRS. Bull., vol. 30, pp. 285-389, May. 2005.
    • (2005) MRS. Bull. , vol.30 , pp. 285-389
    • Atwater, H.A.1    Maier, S.2    Polman, A.3    Dionne, J.A.4    Sweatlock, L.5
  • 130
    • 60749129452 scopus 로고    scopus 로고
    • "Surface plasmon nanophotonics: A tutorial,"
    • Sep
    • R. Gordon, "Surface plasmon nanophotonics: A tutorial," IEEE Nanotech. Mag., vol. 2, pp. 13-18, Sep. 2008.
    • (2008) IEEE Nanotech. Mag. , vol.2 , pp. 13-18
    • Gordon, R.1
  • 131
    • 35348978753 scopus 로고    scopus 로고
    • Surface plasmon nanophotonics
    • Springer: Berlin/Heidelberg
    • M.L. Brongersma, Surface plasmon nanophotonics. Springer: Berlin/Heidelberg, 2007.
    • (2007)
    • Brongersma, M.L.1
  • 132
    • 31144441468 scopus 로고    scopus 로고
    • "Shape-controlled synthesis and surface plasmonic properties of metallic nanostructures,"
    • May
    • Y. Xia and N.J. Halas, "Shape-controlled synthesis and surface plasmonic properties of metallic nanostructures," MRS Bull., vol. 30, pp. 368-375, May. 2005.
    • (2005) MRS Bull. , vol.30 , pp. 368-375
    • Xia, Y.1    Halas, N.J.2
  • 133
    • 25144464071 scopus 로고    scopus 로고
    • "Surfactant-directed synthesis and optical properties of onedimensional plasmonic metallic nanostructures,"
    • May
    • C.J. Murphy, T.K. Sau, A. Gole and C.J. Orendorff, "Surfactant-directed synthesis and optical properties of onedimensional plasmonic metallic nanostructures," MRS Bull., vol. 30, pp. 349-355, May. 2005.
    • (2005) MRS Bull. , vol.30 , pp. 349-355
    • Murphy, C.J.1    Sau, T.K.2    Gole, A.3    Orendorff, C.J.4
  • 134
    • 0000274050 scopus 로고    scopus 로고
    • "Nanoscale chemical analysis by tip-enhanced Raman spectroscopy,"
    • Feb
    • R. Stockle, Y.D. Suh, V. Deckert and R. Zenobi, "Nanoscale chemical analysis by tip-enhanced Raman spectroscopy," Chem. Phys. Lett., vol. 318, pp. 131-136, Feb. 2000.
    • (2000) Chem. Phys. Lett. , vol.318 , pp. 131-136
    • Stockle, R.1    Suh, Y.D.2    Deckert, V.3    Zenobi, R.4
  • 135
    • 0000518833 scopus 로고    scopus 로고
    • "Locally enhanced Raman spectroscopy with an atomic force microscope,"
    • May
    • M.S. Anderson, "Locally enhanced Raman spectroscopy with an atomic force microscope," Appl. Phys. Lett., vol. 76, pp. 3130-3132, May. 2000.
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 3130-3132
    • Anderson, M.S.1
  • 136
    • 0141483267 scopus 로고    scopus 로고
    • "Near-field scanning Raman microscopy using apertureless probes,"
    • Sep
    • W.X. Sun and Z.X. Shen, "Near-field scanning Raman microscopy using apertureless probes," J. Raman Spectrosc., vol. 34, pp. 668-676, Sep. 2003.
    • (2003) J. Raman Spectrosc. , vol.34 , pp. 668-676
    • Sun, W.X.1    Shen, Z.X.2
  • 137
    • 17444390895 scopus 로고    scopus 로고
    • "Subwavelength-resolution Raman microscopy of Si structures using metalparticle-topped AFM probe,"
    • Jun
    • V. Poborchii, T. Tada and T. Kanayama, "Subwavelength-resolution Raman microscopy of Si structures using metalparticle-topped AFM probe," Jpn. J. Appl. Phys., vol. 44, pp. L202-L204, Jun. 2005.
    • (2005) Jpn. J. Appl. Phys. , vol.44
    • Poborchii, V.1    Tada, T.2    Kanayama, T.3
  • 139
    • 0003293222 scopus 로고    scopus 로고
    • "Controlling and tuning strong optical field gradients at a local probe microscope tip apex,"
    • Feb
    • O.J.F. Martin and C. Girard, "Controlling and tuning strong optical field gradients at a local probe microscope tip apex," Appl. Phys. Lett., vol. 70, pp. 705-707, Feb. 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 705-707
    • Martin, O.J.F.1    Girard, C.2
  • 140
    • 34250730184 scopus 로고    scopus 로고
    • "Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy,"
    • Jun
    • N. Hayazawa, M. Motohashi, Y. Saito, H. Ishitobi, A. Ono, T. Ichimura, P. Verma and S. Kawata, "Visualization of localized strain of a crystalline thin layer at the nanoscale by tip-enhanced Raman spectroscopy and microscopy," J. Raman Spectrosc., vol. 38, pp. 684-696, Jun. 2007.
    • (2007) J. Raman Spectrosc. , vol.38 , pp. 684-696
    • Hayazawa, N.1    Motohashi, M.2    Saito, Y.3    Ishitobi, H.4    Ono, A.5    Ichimura, T.6    Verma, P.7    Kawata, S.8
  • 141
    • 33645680220 scopus 로고    scopus 로고
    • "Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode,"
    • Apr
    • Y. Saito, M. Motohashi, N. Hayazawa, M. Iyoki and S. Kawata, "Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode," Appl. Phys. Lett., vol. 88, pp. 143109-1-3, Apr. 2006.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 14310913
    • Saito, Y.1    Motohashi, M.2    Hayazawa, N.3    Iyoki, M.4    Kawata, S.5
  • 142
    • 22144498104 scopus 로고    scopus 로고
    • "Highly sensitive strain detection in strained silicon by surfaceenhanced Raman spectroscopy,"
    • Jun
    • N. Hayazawa, M. Notohashi, Y. Saito and S. Kawata, "Highly sensitive strain detection in strained silicon by surfaceenhanced Raman spectroscopy," Appl. Phys. Lett., vol. 86, pp. 263114-1-3, Jun. 2005.
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 26311413
    • Hayazawa, N.1    Notohashi, M.2    Saito, Y.3    Kawata, S.4
  • 143
    • 0000138050 scopus 로고    scopus 로고
    • "Near-field Raman scattering enhanced by a metalized tip,"
    • Mar
    • N. Hayazawa, Y. Inouye, Z. Sekkat and S. Kawata, "Near-field Raman scattering enhanced by a metalized tip," Chem. Phys. Lett., vol. 335, pp. 369-374, Mar. 2001.
    • (2001) Chem. Phys. Lett. , vol.335 , pp. 369-374
    • Hayazawa, N.1    Inouye, Y.2    Sekkat, Z.3    Kawata, S.4
  • 144
    • 0037115620 scopus 로고    scopus 로고
    • "Near-field enhanced Raman spectroscopy using side illumination optics,"
    • Dec
    • N. Hayazawa, A. Tarun, Y. Inouye and S. Kawata, "Near-field enhanced Raman spectroscopy using side illumination optics," J. Appl. Phys., vol. 92, pp. 6983-6986, Dec. 2002.
    • (2002) J. Appl. Phys. , vol.92 , pp. 6983-6986
    • Hayazawa, N.1    Tarun, A.2    Inouye, Y.3    Kawata, S.4
  • 145
    • 0036685741 scopus 로고    scopus 로고
    • "Preparation of cantilevered W tips for atomic force microscopy and apertureless near-field scanning optical microscopy,"
    • Aug
    • W.X. Sun, Z.X. Shen, F.C. Cheong, G.Y. Yu, K.Y. Lim and J.Y. Lin, "Preparation of cantilevered W tips for atomic force microscopy and apertureless near-field scanning optical microscopy," Rev. Sci. Instrum. vol. 73, pp. 2942-2947, Aug. 2002.
    • (2002) Rev. Sci. Instrum. , vol.73 , pp. 2942-2947
    • Sun, W.X.1    Shen, Z.X.2    Cheong, F.C.3    Yu, G.Y.4    Lim, K.Y.5    Lin, J.Y.6
  • 146
    • 4043149341 scopus 로고    scopus 로고
    • "Mechanics of thin films and microdevices,"
    • Jun
    • I. Chasiotis, "Mechanics of thin films and microdevices," IEEE Trans. Dev. Mater. Rel. vol. 4, pp. 176-188, Jun. 2004.
    • (2004) IEEE Trans. Dev. Mater. Rel. , vol.4 , pp. 176-188
    • Chasiotis, I.1
  • 148
    • 33747146387 scopus 로고    scopus 로고
    • "An evaluation of digital image correlation criteria for strain mapping applications,"
    • Nov
    • W. Tong, "An evaluation of digital image correlation criteria for strain mapping applications," Strain, vol. 41, pp. 167-175, Nov. 2005.
    • (2005) Strain , vol.41 , pp. 167-175
    • Tong, W.1
  • 149
    • 0344062591 scopus 로고    scopus 로고
    • "A method for measuring microstructural-scale strains using a scanning electron microscope: Applications to g-titanium aluminides,"
    • Oct
    • N. Biery, M. de Graff and T.M. Pollock, "A method for measuring microstructural-scale strains using a scanning electron microscope: Applications to g-titanium aluminides," Metall. Mater. Trans. A, vol. 34A, pp. 22301-2313, Oct. 2003.
    • (2003) Metall. Mater. Trans. A , vol.34 A , pp. 22301-2313
    • Biery, N.1    de Graff, M.2    Pollock, T.M.3
  • 150
    • 33749554122 scopus 로고    scopus 로고
    • Foundations of MEMS
    • Pearson: Upper Saddle River
    • C. Liu, Foundations of MEMS. Pearson: Upper Saddle River, 2006.
    • (2006)
    • Liu, C.1
  • 151
    • 34848812263 scopus 로고    scopus 로고
    • "Microscale characterization of mechanical properties,"
    • K.J. Hemker and W.N. Sharpe, "Microscale characterization of mechanical properties," Annu. Rev. Mater. Res., vol. 37, pp. 93-126, 2007.
    • (2007) Annu. Rev. Mater. Res. , vol.37 , pp. 93-126
    • Hemker, K.J.1    Sharpe, W.N.2
  • 152
    • 77952713825 scopus 로고    scopus 로고
    • "In situ scanning probe microscopy nanomechanical testing,"
    • May
    • X. Li, I. Chasiotis, T. Kitamura, "In situ scanning probe microscopy nanomechanical testing," MRS Bull., vol. 35, pp. 361-367, May. 2010.
    • (2010) MR Bull. , vol.35 , pp. 361-367
    • Li, X.1    Chasiotis, I.2    Kitamura, T.3
  • 153
    • 0032095839 scopus 로고    scopus 로고
    • "Submicron deformation field measurements: Part 2. Improved digital image correlation,"
    • Jun
    • G. Vendroux and W.G. Knauss, "Submicron deformation field measurements: Part 2. Improved digital image correlation," Expt. Mech., vol. 38, pp. 86-92, Jun. 1998.
    • (1998) Expt. Mech. , vol.38 , pp. 86-92
    • Vendroux, G.1    Knauss, W.G.2
  • 154
    • 0037340866 scopus 로고    scopus 로고
    • "Mechanical measurements at the micron and nanometer scales,"
    • Mar
    • W.G. Knauss, I. Chasiotis and Y. Huang, "Mechanical measurements at the micron and nanometer scales," Mech. Mater., vol. 35, pp. 217-231, Mar. 2003.
    • (2003) Mech. Mater. , vol.35 , pp. 217-231
    • Knauss, W.G.1    Chasiotis, I.2    Huang, Y.3
  • 155
    • 0034542354 scopus 로고    scopus 로고
    • "Microtensile tests with the aid of probe microscopy for the study of MEMS materials"
    • In: Proceedings of SPIE
    • I. Chasiotis, W.G. Knauss, "Microtensile tests with the aid of probe microscopy for the study of MEMS materials", In: Proceedings of SPIE Vol. 4175, 2000, pp. 96-103.
    • (2000) , vol.4175 , pp. 96-103
    • Chasiotis, I.1    Knauss, W.G.2
  • 156
    • 0036504397 scopus 로고    scopus 로고
    • "A new microtensile tester for the study of MEMS materials with the aid of atomic force microscopy,"
    • Mar
    • I. Chasiotis and W.G. Knauss, "A new microtensile tester for the study of MEMS materials with the aid of atomic force microscopy," Expt. Mech., vol. 42, pp. 51-57, Mar. 2002.
    • (2002) Expt. Mech. , vol.42 , pp. 51-57
    • Chasiotis, I.1    Knauss, W.G.2
  • 157
    • 33846285316 scopus 로고    scopus 로고
    • "Elastic properties and representative volume element of polycrystalline silicon for MEMS,"
    • Feb
    • S.W. Cho and I. Chasiotis, "Elastic properties and representative volume element of polycrystalline silicon for MEMS," Expt. Mech., vol. 47, pp. 37-49, Feb. 2007.
    • (2007) Expt. Mech. , vol.47 , pp. 37-49
    • Cho, S.W.1    Chasiotis, I.2
  • 158
    • 17444387973 scopus 로고    scopus 로고
    • "Measurement of nanodisplacements and elastic properties of MEMS via the microscopic hole method,"
    • Apr
    • S. Cho, J.F. Cardenas-Garcia, I. Chasiotis, "Measurement of nanodisplacements and elastic properties of MEMS via the microscopic hole method," Sen. Actuators A, vol. 120, pp. 163-171, Apr. 2005.
    • (2005) Sen. Actuators A , vol.120 , pp. 163-171
    • Cho, S.1    Cardenas-Garcia, J.F.2    Chasiotis, I.3
  • 159
    • 17444373545 scopus 로고    scopus 로고
    • "Young's modulus, Poisson's ratio and failure properties of tetrahedral amorphous diamond-like carbon for MEMS devices,"
    • Apr
    • S. Cho, I. Chasiotis, T.A. Friedmann and J.P. Sullivan, "Young's modulus, Poisson's ratio and failure properties of tetrahedral amorphous diamond-like carbon for MEMS devices," J. Micromech. Microeng., vol. 15, pp. 728-735, Apr. 2005.
    • (2005) J. Micromech. Microeng. , vol.15 , pp. 728-735
    • Cho, S.1    Chasiotis, I.2    Friedmann, T.A.3    Sullivan, J.P.4
  • 160
    • 55649083717 scopus 로고    scopus 로고
    • "Nanoscale and effective mechanical behavior and fracture of silica nanocomposites,"
    • Dec
    • Q. Chen, I. Chasiotis, C. Chen and A. Roy, "Nanoscale and effective mechanical behavior and fracture of silica nanocomposites," Comp. Sci. Technol., vol. 68, pp. 3137-3144, Dec. 2008
    • (2008) Comp. Sci. Technol. , vol.68 , pp. 3137-3144
    • Chen, Q.1    Chasiotis, I.2    Chen, C.3    Roy, A.4
  • 161
    • 84898995972 scopus 로고    scopus 로고
    • X-ray metrology in semiconductor manufacturing
    • Taylor and Francis: Boca Raton
    • D. K. Bowen and B.K. Tanner, X-ray metrology in semiconductor manufacturing. Taylor and Francis: Boca Raton, 2006.
    • (2006)
    • Bowen, D.K.1    Tanner, B.K.2
  • 162
    • 0003547401 scopus 로고    scopus 로고
    • X-ray fluorescence spectrometry
    • Wiley: New York
    • R. Jenkins, X-ray fluorescence spectrometry. Wiley: New York, 1999.
    • (1999)
    • Jenkins, R.1
  • 163
    • 0003463992 scopus 로고    scopus 로고
    • X-ray and neutron reflectivity: principles and applications
    • Springer Verlag: Berlin Heidelberg
    • J. Daillant and A. Gibaud, X-ray and neutron reflectivity: principles and applications. Springer Verlag: Berlin Heidelberg, 1999.
    • (1999)
    • Daillant, J.1    Gibaud, A.2
  • 164
    • 36249032600 scopus 로고    scopus 로고
    • Organic field-effect transistors
    • CRC Press: Roca Baton
    • Z. Bao, Organic field-effect transistors. CRC Press: Roca Baton, 2007.
    • (2007)
    • Bao, Z.1
  • 165
    • 84882610493 scopus 로고    scopus 로고
    • "High resolution X-ray scattering methods for ULSI materials characterization,"
    • In: Characterization and metrology for ULSI Technology
    • R.J. Matyi, "High resolution X-ray scattering methods for ULSI materials characterization,". In: Characterization and metrology for ULSI Technology, 2005.
    • (2005)
    • Matyi, R.J.1
  • 166
    • 4344603758 scopus 로고    scopus 로고
    • "Investigation of thermal and oxygen plasma stability of mesoporous methylsilsesquixoane low-k films by X-ray reflectivity and small angle scattering,"
    • Sep
    • T.K. Goh and T.K.S. Wong, "Investigation of thermal and oxygen plasma stability of mesoporous methylsilsesquixoane low-k films by X-ray reflectivity and small angle scattering,". Microelect. Eng., vol. 75, pp. 330-343, Sep. 2004.
    • (2004) Microelect. Eng. , vol.75 , pp. 330-343
    • Goh, T.K.1    Wong, T.K.S.2
  • 167
    • 0003427458 scopus 로고    scopus 로고
    • Elements of X-ray diffraction
    • Prentice Hall: Upper Saddle River
    • B.D. Cullity, Elements of X-ray diffraction. Prentice Hall: Upper Saddle River, 2001.
    • (2001)
    • Cullity, B.D.1
  • 168
    • 0033938922 scopus 로고    scopus 로고
    • "New avenues in X-ray microbeam experiments,"
    • Mar
    • C. Riekel, "New avenues in X-ray microbeam experiments," Rep. Prog. Phys., vol. 63, pp. 233-262, Mar. 2000.
    • (2000) Rep. Prog. Phys. , vol.63 , pp. 233-262
    • Riekel, C.1
  • 169
    • 35748985864 scopus 로고    scopus 로고
    • "Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron X-ray scattering,"
    • Nov
    • T.K.S. Wong, Y. Gong, P. Yang and C.M. Ng, "Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron X-ray scattering," Semicond. Sci. Technol., vol. 22, pp. 1232-1239, Nov. 2007.
    • (2007) Semicond. Sci. Technol. , vol.22 , pp. 1232-1239
    • Wong, T.K.S.1    Gong, Y.2    Yang, P.3    Ng, C.M.4
  • 170
    • 84882664825 scopus 로고    scopus 로고
    • "Studies of structural responses and stressor effects at the interfaces of Si/SiGe nanostructures using synchrotron X-ray nanodiffraction,"
    • In: International Conference on Materials for Advanced Technologies abstracts
    • Z. Cai, "Studies of structural responses and stressor effects at the interfaces of Si/SiGe nanostructures using synchrotron X-ray nanodiffraction," In: International Conference on Materials for Advanced Technologies abstracts, 2007, pp. 9.
    • (2007) , pp. 9
    • Cai, Z.1
  • 171
    • 17044402620 scopus 로고    scopus 로고
    • "Dissecting a compositionally graded SiGe virtual substrate by X-ray reciprocal space mapping,"
    • In: Electrochemical Society Proceedings volume 2004-07
    • J. Zhang, X.B. Li and P.F. Fewster, "Dissecting a compositionally graded SiGe virtual substrate by X-ray reciprocal space mapping," In: Electrochemical Society Proceedings volume 2004-07, 2004, pp. 983-990.
    • (2004) , pp. 983-990
    • Zhang, J.1    Li, X.B.2    Fewster, P.F.3
  • 173
    • 0004133128 scopus 로고
    • Residual stress measurement by diffraction and interpretation
    • Springer Verlag: New York
    • I.C. Noyan and J.B. Cohen, Residual stress measurement by diffraction and interpretation. Springer Verlag: New York, 1987.
    • (1987)
    • Noyan, I.C.1    Cohen, J.B.2
  • 174
    • 0034285134 scopus 로고    scopus 로고
    • "X-ray diffraction as a tool to study the mechanical behavior of thin films," Mater
    • Sep
    • O. Kraft, M. Hommel and E. Artz, "X-ray diffraction as a tool to study the mechanical behavior of thin films," Mater. Sci. Eng. A, vol. 288, pp. 209-216, Sep. 2000.
    • (2000) Sci. Eng. A , vol.288 , pp. 209-216
    • Kraft, O.1    Hommel, M.2    Artz, E.3
  • 175
    • 0033685517 scopus 로고    scopus 로고
    • "Synchrotron X-ray study of elastic phase starins in the bulk of externally loaded Cu/Mo composite,"
    • In: Materials Research Society Symposium Proceedings
    • A. Wanner and D.C. Dunand, "Synchrotron X-ray study of elastic phase starins in the bulk of externally loaded Cu/Mo composite," In: Materials Research Society Symposium Proceedings Vol. 590, 2000, pp. 157-162.
    • (2000) , vol.590 , pp. 157-162
    • Wanner, A.1    Dunand, D.C.2
  • 180
    • 33745050126 scopus 로고    scopus 로고
    • "Crystal plascticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron X-ray microdiffraction,"
    • Jun
    • A.S. Budiman, W.D. Nix, N. Tamura, B.C. Valek, K. Gadre, J. Maiz and J.R. Patel, "Crystal plascticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron X-ray microdiffraction," Appl. Phys. Lett., vol. 88, pp. 233515-1-3, Jun. 2006.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 23351513
    • Budiman, A.S.1    Nix, W.D.2    TaMura, N.3    Valek, B.C.4    Gadre, K.5    Maiz, J.6    Patel, J.R.7
  • 181
    • 77952708329 scopus 로고    scopus 로고
    • "In situ elastic strain measurements-diffraction and spectroscopy,"
    • May
    • R. Spolenak, W. Ludwig, J.Y. Buffiere and J. Michler, "In situ elastic strain measurements-diffraction and spectroscopy," MRS Bull., vol. 35, pp. 368-374, May. 2010
    • (2010) MRS Bull. , vol.35 , pp. 368-374
    • Spolenak, R.1    Ludwig, W.2    Buffiere, J.Y.3    Michler, J.4
  • 183
    • 77955974559 scopus 로고    scopus 로고
    • "Mesopores inside electrode particles can change Li-ion transport mechanism and diffusion-induced stress,"
    • Aug
    • S.J. Harris, R.D. Deshpande, Y. Qi, I. Dutta and Y.T. Cheng, "Mesopores inside electrode particles can change Li-ion transport mechanism and diffusion-induced stress," J. Mater. Res., vol. 25, pp. 1433-1440 Aug. 2010. 128 Semiconductor Strain Metrology: Principles and Applications Terence K.S. Wong
    • (2010) J. Mater. Res. , vol.25 , pp. 1433-1440
    • Harris, S.J.1    Deshpande, R.D.2    Qi, Y.3    Dutta, I.4    Cheng, Y.T.5
  • 184
    • 79951506511 scopus 로고    scopus 로고
    • "Evaluation of strained-silicon by electron backscattering pattern measurement: comparison study with UV-Raman measurement and edge force model calculation,"
    • Mar
    • M. Tomita, D. Kosemura, M. Takei, K. Nagata, H. Akamatsu and A. Ougra, "Evaluation of strained-silicon by electron backscattering pattern measurement: comparison study with UV-Raman measurement and edge force model calculation," Jap. J. Appl. Phys., vol. 50, pp. 010111-1-8, Mar. 2011
    • (2011) Jap. J. Appl. Phys. , vol.50 , pp. 01011118
    • Tomita, M.1    Kosemura, D.2    Takei, M.3    Nagata, K.4    Akamatsu, H.5    Ougra, A.6


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