Strain dependence of the direct energy bandgap in thin silicon on insulator layers

Journal of Physics D: Applied Physics

Volumn 43, Issue 25, 2010, Pages

  Munguia J ^a   Bluet, J M ^a   Chouaib, H ^a   Bremond, G ^a   Mermoux, M ^b   Bru Chevallier, C ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b LEPMI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BIAXIAL STRAIN EFFECT; ENERGY BANDGAPS; PHOTOREFLECTANCE SPECTROSCOPY; RED SHIFT; SILICON ON INSULATOR; STRAIN DEPENDENCE; STRAINED SILICON ON INSULATOR; THEORETICAL PREDICTION; THIN LAYERS;

ENERGY GAP;

EID: 77953602834     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/25/255401     Document Type: Article

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