Optical strain measurement in ultrathin sSOI wafer

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 18-21

  Munguia J ^a   Chouaib, H ^a   de la Torre, J ^a   Bremond, G ^a   Bru Chevallier, C ^a   Sibai, A ^a   Champagnon, B ^b   Moreau, M ^c   Bluet, J M ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

^c HORIBA LTD   (Japan)

Author keywords

Photoluminescence; Photoreflectance; Raman Spectroscopy; sSOI; Strained silicon

Indexed keywords

PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

CONDUCTION BAND SPLITTING; LOW TEMPERATURE PHOTOLUMINESCENCE (LTPL); PHONON ENERGY SHIFT; PHOTOREFLECTANCE (PR); STRAINED SILICON;

STRAIN MEASUREMENT;

EID: 33751418299     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.007     Document Type: Article

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