Uniaxial-process-induced Strained-Si: Extending the CMOS roadmap

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1010-1020

  Thompson, Scott E ^a   Sun, Guangyu ^a   Choi, Youn Sung ^a   Nishida, Toshikazu ^a  

^a University of Florida   (United States)

Author keywords

CMOS; Enhanced mobility; Strained silicon

Indexed keywords

COMPRESSIVE STRESS; COMPUTATIONAL METHODS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOLE MOBILITY; SEMICONDUCTING SILICON; STRAIN;

BIAXIAL STRESS; ENHANCED MOBILITY; GATE TUNNELING; STRAINED-SILICON; UNIAXIAL-PROCESS-INDUCED STRAIN;

CMOS INTEGRATED CIRCUITS;

EID: 33646043420     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872088     Document Type: Review

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