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Volumn 95, Issue 5, 2009, Pages

Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND NOISE; DARK FIELD; EXPERIMENTAL ERRORS; FIELD OF VIEWS; NANO-METER-SCALE; SPATIAL RESOLUTION; STRAIN MAPS; STRAINED SIGE; TWO-DIMENSIONAL;

EID: 68349154413     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3196549     Document Type: Article
Times cited : (59)

References (15)
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    • Hytch, M.J.1    Putaux, J.-L.2    Penisson, J.-M.3
  • 8
    • 42449161474 scopus 로고    scopus 로고
    • Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy
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  • 13
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    • DOI 10.1016/j.ultramic.2005.06.001, PII S0304399105001038
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.