High-resolution strain measurement in shallow trench isolation structures using dynamic electron diffraction

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2181-2183

  Kim, Miyoung ^a   Zuo, J M ^b   Park, Gyeong Su ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SHALLOW TRENCH ISOLATION (STI); STRESS LEVEL MEASUREMENTS;

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON EMISSION; FIELD EMISSION MICROSCOPES; KINEMATICS; LATTICE CONSTANTS; PATTERN MATCHING; PLASMA DENSITY; PROBES; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 1942540699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687451     Document Type: Article

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