Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy

Applied Physics Letters

Volumn 72, Issue 12, 1998, Pages 1478-1480

  Webster, S ^a   Batchelder, D N ^a   Smith, D A ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MECHANICAL VARIABLES MEASUREMENT; OPTICAL IMAGE STORAGE; OPTICAL RESOLVING POWER; PHASE TRANSITIONS; PLASTIC DEFORMATION; PROBES; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

POLARIZATION PROPERTIES; SCANNING NEAR FIELD OPTICAL MICROSCOPE; SUBMICRON RESOLUTION MEASUREMENT;

RAMAN SPECTROSCOPY;

EID: 0032026928     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120598     Document Type: Article

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