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Volumn 9, Issue 11, 2009, Pages 3837-3843

Mapping active dopants in single silicon nanowires using off-axis electron holography

Author keywords

[No Author keywords available]

Indexed keywords

DETECTION THRESHOLD; DOPANT CONCENTRATIONS; DOPING CONCENTRATION; ELECTRON CHARGE; EXPERIMENTAL DATA; OFF-AXIS ELECTRON HOLOGRAPHY; OXIDE INTERFACES; SILICON NANOWIRES; SIMULATION DEMONSTRATE; SPATIAL RESOLUTION;

EID: 72849142167     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl902024h     Document Type: Article
Times cited : (72)

References (32)
  • 28
    • 72849138854 scopus 로고    scopus 로고
    • note
    • -2 has been simulated and is found to be similar to the measured phase gradient shown in Figure 2E. Simulations also predict the existence of phase variations in the vacuum around the doped regions. Such variations were only rarely observed and if so were of reduced intensity. These results will be published in the Institute of Physics Conference Series in 2009.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.