Cathodoluminescence scanning electron microscopy of semiconductors

Journal of Applied Physics

Volumn 59, Issue 4, 1986, Pages

  Yacobi, B G ^a,b   Holt, D B ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b VERIZON   (United States)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11544321141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.336491     Document Type: Article

References (230)

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14. The role of impurities in refined ZnSe and other II‐VI semiconductors
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17. Models of Midgap Centers in Gallium Arsenide
18. Recombination mechanisms
19. Developments in Semiconducting Materials Applications of the SEM
20. Electrical recombination behavior at dislocations in gallium phosphide and silicon
21. Cathodoluminescence measurements of the minoritycarrier lifetime in semiconductors
22. A capacitance meter of high absolute sensitivity suitable for scanning DLTS application
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25. Bibliography on Cathodoluminescence, Part II
26. Analysis of n‐type GaAs with electron‐beam‐excited radiative recombination
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28. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs
29. Spectral resolution in low temperature cathodoluminescence. Application to CdTe
30. The defect structure of CdTe: Hall data
31. Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samples
32. Evaluation of defects in InP and InGaAsP by transmission cathodoluminescence
33. Imaging of dislocations in InP using transmission cathodoluminescence
34. Evaluation of defects and degradation in GaAs‐GaAlAs wafers using transmission cathodoluminescence
35. Uniformity characterization of semi‐insulating GaAs by cathodoluminescence imaging
36. SEM CL and TEM Studies of Te‐ and Si‐Doped GaAs
37. Dislocation Density Variations Across Semi‐Insulating GaAs Substrates
38. Preparation, optimization, and cathodoluminescent properties of a line emission penetration phosphor
39. Emission and Transmission Cathodoluminescence Analysis of InGaAsP/InP LPE Double Heterostructures Emitting at 1.3 and 1.6 Microns
40. Temperature Dependence of Semiconductor Band States
41. Characterization of ion‐implanted GaAs using cathodoluminescence
42. Cathodoluminescence Imaging of Silicon
43. Radiative recombination from GaAs directly excited by electron beams
44. Scanning electron microscope EBIC and CL micrographs of dislocations in GaP
45. SEM and TEM studies of defects in Si‐doped GaAs substrate material before and after Zn diffusion
46. Scanning electron microscope studies of local variations in cathodoluminescence in striated ZnS platelets
47. The shape of the self‐activated cathodoluminescence band in ZnS:Cl crystals
48. Cathodoluminescence and Photoconductivity Measurements on Electrophotographic Grade ZnO
49. SEM cathodoluminescence studies of plastically deformed gallium phosphide
50. A High‐resolution cathodoluminescence analysis system
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52. Semiconductor material assessment by scanning electron microscopy
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54. A New Scanning Cathodoluminescence Microprobe System
55. Cathodoluminescence
56. Lattices of the Diamond Type
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58. Excitons in Semiconductors
59. Cathodoluminescence of Organic Chemicals
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61. SEM cathodoluminescence studies of dislocation recombination in GaP
62. Optical properties of n‐type indium arsenide in the fundamental absorption edge region
63. Toward a unified theory of Urbach’s rule and exponential absorption edges
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65. Cathodoluminescence studies of dislocations in semiconductors
66. Cathodoluminescence study of plastically deformed GaAs
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68. Determination of kilovolt electron energy dissipation versus penetration distance in solid materials
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70. A unifying interpretation of dark line defects in GaAs and bright dislocation halos in CaP
71. Cathodoluminescence in InP
72. Transmission cathodoluminescence as a screening technique for rake lines in (AJ, Ga)As DH laser material
73. Cathodoluminescence
74. High‐resolution luminescence studies of indium phosphide under ohmic contacts
75. Deep Level Impurities in Semiconductors
76. On topographically identifiable sources of cathodoluminescence in natural diamonds
77. Simultaneous Detection Techniques and Computer‐Controlled Data Acquisition for Spectrally and Time Resolved Cathodoluminescence in the SEM
78. Time‐Resolved Cathodoluminescence in Scanning Electron Microscopy
79. New radiation resulting from recombination of holes and electrons in germanium
80. Characterization of Defects in Semiconductors by Combined Application of SEM (EBIC) and SDLTS
81. Scanning electron microscope studies of stnations in ZnS
82. Quantitative SEM Studies of CL in Adamantine Semiconductors
83. The Cathodoluminescence Mode as an Analytical Technique: Its Development and Prospects
84. Recent Developments in SEM Detection Systems for the Cathodoluminescence and Conductive Modes
85. Cathodoluminescence Mode Scanning Electron Microscopy
86. Microcharacterization of Crystals Using the Scanning Electron Microscope
87. The Cathodoluminescence Mode of the SEM: A Powerful Microcharacterization Technique
88. Scanning electron microscopy of biological materials using cathodoluminescence
89. CL SEM Investigations of Biological Material at Liquid‐Helium and Liquid‐Nitrogen Temperatures
90. Electronic States of Dislocations in Compound Semiconductors—A New Model
91. Visualization of the grain‐boundary potential barriers of PTC‐type [formula omitted] ceramics by cathodoluminescence in an electron‐probe microanalyzer
92. Conductivity‐dependent cathodoluminescence in [formula omitted] [formula omitted] and [formula omitted]
93. Cathodoluminescence efficiency of binary compound phosphors
94. Temperature Variation of Cathodoluminescence in Direct Gap Semiconductors
95. Electron channeling patterns in the scanning electron microscope
96. Role of dislocations in semi‐insulation mechanism in undoped LEC GaAs crystal
97. Penetration and energyloss theory of electrons in solid targets
98. Theory of the Urbach rule
99. Systematic analysis of phosphor degradation under cathode‐ray excitation
100. Band‐gap dependence and related features of radiation ionization energies in semiconductors
101. Luminescence in Solids
102. Introduction to Exciton Physics
103. Micronscaled spectral‐resolved cathodoluminescence of grains in bariumtitanate ceramics
104. Cathodoluminescence in Gallium Arsenide
105. Electrical Properties of Dislocations in Semiconductors
106. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
107. Junction current and luminescence near a dislocation or a surface
108. Charge collection scanning electron microscopy
109. An analysis of color‐changing penetration type cathodoluminescent phosphor screens
110. Cathodoluminescence of [formula omitted] As grown by liquid‐phase epitaxy
111. Characterization of Semiconducting Materials and Devices by EBIC. and CL Techniques
112. The cathodoluminescence contrast formation of localized nonradiative defects in semiconductors
113. A Scanning Electron Microscope Based Cathodoluminescence Measurement System—Instrumentation and Capabilities
114. Cathodoluminescence studies of dislocation motion in II‐VI compounds deformed in SEM
115. Quantitative measurements of recombination enhanced dislocation glide in gallium arsenide
116. SEM and photolu‐minescence study of Li segregation in annealed zinc telluride
117. Electric field dependent cathodoluminscence of III‐V compound heterostructures: A new interface characterization technique
118. Ultraviolet absorption of KI diluted in KC1 crystals
119. Absorption band shape and Urbach’s rule of localized excitons
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121. Self‐compensation‐limited conductivity in binary semiconductors. III. Expected correlations with fundamental parameters
122. Interaction of normal modes with electron traps
123. Structure and energy levels of dislocations in silicon
124. Self‐compensation‐limited conductivity in binary semiconductors. IV. [formula omitted]
125. Recombination: A survey
126. Cathodoluminescence assessment of electron beam recrystallized silicon
127. SEM CL Assessment of Minority Carrier Lifetime in Silicon
128. Near Infrared Cathodoluminescence Assessment of Semiconductors in a TEM
129. Time‐Resolved Cathodoluminescence by Delayed Coincidence
130. Luminescence studies of individual dislocations in II‐VI (ZnSe) and III‐V (InP) semiconductors
131. Behavior of phosphors under low voltage cathode ray excitation
132. Deep Levels in Wide Band‐Gap III‐V Semiconductors
133. The present status of cathodoluniinescence as a tool in sedimentology
134. Electron backscattering from thin films
135. Depth‐resolved cathodoluminescence in undamaged and ion‐implanted GaAs, ZnS, and CdS
136. Cathodoluminescence studies of anomalous ion implantation defect introduction in CdTe
137. Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn
138. The early history of the scanning electron microscope
139. Penetration phosphors: Preparation and cathodoluminescence properties
140. The use of an internal reference in cathodoluminescence
141. A study on cathodoluminescence intensities in the range below 3 kV
142. Cathodoluminescence of p‐type GaAs
143. Identification of Auger electrons in GaAs
144. Hydrogenated Amorphous Silicon
145. Recent Advances in Injection Luminescence in II‐VI Compounds
146. The segregation of impurities and the self‐compensation problem in II‐VI compounds
147. SEM at Low Beam Voltage
148. A Tight‐Binding Model of the ZnS F Centre
149. Cathodoluminescence in a Scanning Transmission Electron Microscope
150. Cathodoluminescence at dislocations in divalent oxides
151. Observation of cathodoluminescence at single dislocations by STEM
152. Study of single‐electron excitations by electron microscopy. II. Cathodoluminescence image contrast from localized energy transfers
153. A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in STEM
154. Scanning Transmission Electron Microscopy Techniques for Simultaneous Electronic Analysis and Observation of Defects in Semiconductors
155. Nonradiative recombination at dislocations in HI‐V compound semiconductors
156. Nonradiative recombination at dislocations in III‐V compound semiconductors
157. Luminescence Properties of GaAs Epitaxial Layers Grown by Liquid Phase Epitaxy and Molecular Beam Epitaxy
158. Luminescence properties of GaAs‐Ga, _^Al,As double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy
159. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
160. The Cathodoluminescence Method in the Scanning Electron Microscope
161. Stoichiometry and doping in large gap compound semiconductors
162. Measurement of diffusion lengths in p type galluim arsenide by electron beam excitation
163. A Detailed Study of Radiative and Nonradiative Recombination Around Dislocations in GaP
164. SEM Measurements of Minority Carrier Lifetimes at Dislocations in GaP, Employing Photon Counting
165. Investigation of fluorescent lamp phosphors using the combined CL and EDS modes of the SEM
166. On predicting the maximum efficiency of phosphor systems excited by ionizing radiation
167. High resolution in scanning cathodoluminescence of ZnS edge emission
168. Spatial Distribution of Donors in MOCVD ZnSe
169. Electrically Active Grain Boundaries in Polycrystalline Zinc Selenide
170. Scanning Cathodoluminescence Microscopy of Polycrystalline GaAs
171. Investigation of crystal defects by cathodoluminescence
172. Lattice mismatch effects in the vapour phase epitaxial growth of ternary III‐V semiconductors
173. Electron spin resonance of the Fcentre in ZnS
174. Secondary electron emission in the scanning electron microscope
175. Statistics of the recombination of holes and electrons
176. Nonequilibrium steady‐state statistics and associated effects for insulators and semiconductors containing an arbitrary distribution of traps
177. Minority carrier lifetime mapping in the SEM
178. Cathodoluminescence Lifetime Pattern of Semiconductor Surfaces and Structures
179. Cathodoluminescence lifetime patterns of GaAs surfaces around dislocations
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181. Microscopic Examination of the Deep Donor EL2 in Undoped Semi‐Insulating GaAs
182. Evidence from photoluminescence studies for a low energy absorption tail in chalcogenide glasses and crystals
183. Luminescence in amorphous semiconductors
184. Temperature and excitation dependences of active layer photoluminescence in (Al,Ga)As laser heterostructures
185. Cathodoluminescence evidence of dislocation interactions in diamond
186. Temperature coefficients of some characteristic reflectivity structure of ZnSe and ZnS
187. Self‐activated emission in ZnS and ZnSe
188. Carrier recombination at dislocations in epitaxial gallium phosphide layers
189. Self‐compensation‐limited conductivity in binary semiconductors. II. n‐ZnTe
190. Correlation of LED device performance with materials and processing using CL and EBIC techniques
191. The long‐wavelength edge of photographic sensitivity and of the electronic absorption of solids
192. Methods of evaluating diffusion lengths and near‐junction luminescence‐efficiency profiles from SEM scans
193. Photon‐radiative recombination of electrons and holes in germanium
194. Temperature dependence of the energy gap in semiconductors
195. Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry
196. Influenceof radiative recombination on the minority‐carrier transport in direct band‐gap semiconductors
197. Low Temperature SEM Cathodoluminescence of Life‐Tested GaAlAs/GaAs Double Heterpjunction Lasers
198. Characterization of Semi‐Insulating GaAs by Scanning Electron Microscopy
199. Characterization of semi‐insulating liquid encapsulated Czochralski GaAs by cathodoluminescence
200. The 1.36 eV radiative transition in InP: Its dependence on growth conditions in MBE and MOCVD material
201. Use of SEM CL Spectra to Determine Local Variations in Ge Doping Concentration in LEC InP Ingots
202. Spatial distribution of 0.68‐eV emission from undoped semi‐insulating gallium arsenide revealed by high resolution luminescence imaging
203. Spatial Variation of Dopant Concentration [formula omitted] Implanted Czochralski and Metal‐Organic Vapour Phase Epitaxial GaAs
204. Influence of Crystal Defects on the Luminescence of GaP
205. Photoluminescence II. Gallium Arsenide
206. Scanning electron microscope studied of cathodoluminescence in ZnSe single crystals
207. Monochromatic Cathodoluminescence Image in the Scanning Electron Miscroscope
208. Bombardment of zinc sulphide single crystals with 30 keV electrons: Light emission
209. Physical properties of radiation induced and growth defects in II‐VI semiconductors
210. Measurement of diffusion lengths in direct‐gap semiconductors by electron‐beam excitation
211. Phonon‐generated microfields and temperature dependence of the absorption edge in II‐VI compounds
212. The form of the edge emission band in CdS and ZnS crystals
213. Temperature shift of the emission edge in ZnS and CdS
214. Cathodoluminescence and polarization studies from individual dislocations in diamond