Characterization of strained Si structures using SIMS and visible Raman

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 255-260

  Goodman, Gary G ^a   Pajcini, Vasil ^a   Smith, Stephen P ^a   Merrill, Philip B ^b  

^a CHARLES EVANS AND ASSOCIATES   (United States)

^b Evans Northeast   (United States)

Author keywords

Ge diffusion; Raman; SiGe; SIMS; Strained silicon

Indexed keywords

CONTAMINATION; DIFFUSION; ELECTRON MOBILITY; EPITAXIAL GROWTH; MIXING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY;

GE DIFFUSION; RAMAN; SIGE; STRAINED SILICON;

SILICON;

EID: 13244252566     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.054     Document Type: Conference Paper

References (3)

1. International technology roadmap for semiconductors, 2003 ed., Semiconductor Industry Association, 2003.
2. K.J. Chao, and G.G. Goodman Mat Res Soc Proc 809 2004 B8.13
3. V. Pajcini Mat Res Soc Proc 809 2004 B3.2