Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering

Semiconductor Science and Technology

Volumn 22, Issue 11, 2007, Pages 1232-1239

  Wong, T K S ^a   Gong, Y ^a,b   Yang, P ^c   Ng, C M ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GERMANIUM; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ELLIPSOMETRY; SYNCHROTRON RADIATION; X RAY SCATTERING;

PARAMETRIC DIELECTRIC FUNCTION MODELS; SILICON GERMANIUM; STRAINED SILICON; SYNCHROTRON X-RAY SCATTERING; VIRTUAL SUBSTRATES;

SILICON COMPOUNDS;

EID: 35748985864     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/11/009     Document Type: Article

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