Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD)

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 138-139

  Usuda, Koji ^a   Numata, T ^a   Tezuka, T ^a   Sugiyama, N ^a   Moriyama, Y ^a   Nakaharai, S ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON DIFFRACTION; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

STRAIN EVALUATION;

MOSFET DEVICES;

EID: 0142154781     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242928     Document Type: Conference Paper

References (3)

1. J.J.Welser et al.,EDL-15, 100(1994)
2. T.Mizuno et al.,EDL-21,230(2000)
3. T.Sato et al., IEDM Tech. Digest 37-01 (2001)