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Volumn 100, Issue 6, 2006, Pages

Strain enhanced p-type metal oxide semiconductor field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; COMPRESSIVE STRAINS; EFFECTIVE MOBILITY; SATURATION CURRENT;

EID: 33749326392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335678     Document Type: Article
Times cited : (2)

References (20)
  • 4
    • 33749365224 scopus 로고    scopus 로고
    • VLSI Technology, 2005
    • (VLSl-TSA-Tech). (25-27 April)
    • C. H. Ko et al., VLSI Technology, 2005. (VLSl-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on, pp. 25-26 (25-27 April 2005).
    • (2005) 2005 IEEE VLSI-TSA International Symposium on , pp. 25-26
    • Ko, C.H.1
  • 8
    • 33749361147 scopus 로고    scopus 로고
    • U.S. Patent No. 6,455,397 (24 September)
    • R. E. Belford, U.S. Patent No. 6,455,397 (24 September 2002).
    • (2002)
    • Belford, R.E.1
  • 9
    • 33749340574 scopus 로고    scopus 로고
    • U.S. Patent No. 6,514,836 (4 February)
    • R. E. Belford, U.S. Patent No. 6,514,836 (4 February 2003).
    • (2003)
    • Belford, R.E.1
  • 16
    • 0003514380 scopus 로고    scopus 로고
    • edited by Y. Taur and T. H. Ning (Cambridge University Press, Cambridge), Fig. 3.24
    • Fundamentals of Modern VLSI Devices, edited by Y. Taur and T. H. Ning (Cambridge University Press, Cambridge, 1998), Fig. 3.24, p. 148.
    • (1998) Fundamentals of Modern VLSI Devices , pp. 148


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.