메뉴 건너뛰기




Volumn 931, Issue , 2007, Pages 64-68

Photo-reflectance characterization of nanometer scale active layers in Si

Author keywords

Dopant concentrations; Photo reflectance; Strain; Ultra shallow junctions

Indexed keywords


EID: 35348901966     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2799438     Document Type: Conference Paper
Times cited : (1)

References (7)
  • 4
    • 35348818567 scopus 로고    scopus 로고
    • David Sing (private communication).
    • David Sing (private communication).
  • 5
    • 35348820387 scopus 로고    scopus 로고
    • Peter Borden, Junction Depth Measurement using Carrier Illumination in Characterization and Metrology for ULSI Technology-2000, edited by D. G. Seiler et al, AIP Conference Proceedings 550, American Institute of Physics, Melville, NY, 2001, pp. 175-180.
    • Peter Borden, "Junction Depth Measurement using Carrier Illumination" in Characterization and Metrology for ULSI Technology-2000, edited by D. G. Seiler et al, AIP Conference Proceedings 550, American Institute of Physics, Melville, NY, 2001, pp. 175-180.
  • 6
    • 0001720790 scopus 로고
    • Modulation Spectroscopy
    • edited by M. Balkanski, Amsterdam: North-Holland
    • D. Aspnes, "Modulation Spectroscopy," in Handbook on Semiconductors, Vol. 2, edited by M. Balkanski, Amsterdam: North-Holland, 1980, pp. 109-154.
    • (1980) Handbook on Semiconductors , vol.2 , pp. 109-154
    • Aspnes, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.