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Physical Review Letters

Volumn 100, Issue 15, 2008, Pages

Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy

(5) Hüe, Florian a,b Hÿtch, Martin a Bender, Hugo c Houdellier, Florent a Claverie, Alain a

a CEMES CNRS (France)

b CEA LETI (France)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; FINITE ELEMENT METHOD; GATE DIELECTRICS; OPTICAL RESOLVING POWER;

DRAIN STRESSORS; GEOMETRIC PHASE ANALYSIS;

MOSFET DEVICES;

EID: 42449161474 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.100.156602 Document Type: Article

Times cited : (180)

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