Metamorphic buffers and optical measurement of residual strain

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Geddo, M ^a,b   Guizzetti, G ^c   Patrini, M ^c   Ciabattoni, T ^c   Seravalli, L ^d   Frigeri, P ^d   Franchi, S ^d  

^a INFM   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

^d IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; PHOTOREFRACTIVE MATERIALS; SPECTROSCOPIC ANALYSIS; STRUCTURAL DESIGN;

CONSTANT-COMPOSITION METAMORPHIC BUFFER LAYERS; EPITAXIAL STRUCTURES; METAMORPHIC BUFFERS; OPTICAL MEASUREMENT;

RESIDUAL STRESSES;

EID: 29744448718     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159106     Document Type: Article

References (26)

1. A. Bosacchi, A. C. De Riccardis, P. Frigeri, S. Franchi, C. Ferrari, S. Gennari, L. Lazzarini, L. Nasi, G. Salviati, A. V. Drigo, and F. Romanato, J. Cryst. Growth 175/1, 1009 (1997).
2. D. J. Dunstan, Philos. Mag. A 0141-8610 73, 1323 (1996); J. Dunstan, P. Kidd, L. K. Howard, and R. P. Dixon, Appl. Phys. Lett. 59, 3390 (1991), and references therein.
3. D. J. Dunstan, Philos. Mag. A 0141-8610 73, 1323 (1996); J. Dunstan, P. Kidd, L. K. Howard, and R. P. Dixon, Appl. Phys. Lett. 59, 3390 (1991), and references therein.
4. F. Romanato, E. Napolitani, A. Carnera, A. V. Drigo, L. Lazzarini, G. Salviati, C. Ferrari, A. Bosacchi, and S. Franchi, J. Appl. Phys. 86, 4748 (1999).
5. J. Tersoff, Appl. Phys. Lett. 62, 693 (1993).
6. W. E. Hoke, P. J. Lemonias, J. J. Mosca, P. S. Lyman, A. Torabi, P. F. Marsh, R. A. McTaggart, S. M. Lardizabal, and K. Hetzler, J. Vac. Sci. Technol. B 17, 1131 (1999).
7. O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J. M. Fastenau, L. Leung, F. J. Towner, A. B. Cornfeld, and W. K. Liu, J. Vac. Sci. Technol. B 20, 1200 (2002).
8. F. Dimroth, U. Schubert, and A. W. Bett, IEEE Electron Device Lett. 21, 209 (2000).
9. Y. C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L. F. Lester, and D. L. Huffaker, J. Appl. Phys. 94, 2133 (2003).
10. A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Y. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Y. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, and Z. I. Alferov, Semiconductors 37, 1411 (2003).
11. L. Seravalli, M. Minelli, P. Frigeri, P. Allegri, V. Avanzini, and S. Franchi, Appl. Phys. Lett. 82, 2341 (2003).
12. M. Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, and A. Forchel, Appl. Phys. Lett. 83, 470 (2003).
13. C. Pickering, R. T. Carline, M. T. Enemy, N. S. Garawal, and L. K. Howard, Appl. Phys. Lett. 60, 2412 (1992).
14. L. C. Andreani, D. De Nova, S. Di Lernia, M. Geddo, G. Guizzetti, M. Patrini, C. Bocchi, A. Bosacchi, C. Ferrari, and S. Franchi, J. Appl. Phys. 78, 6745 (1995), and references therein.
15. S. Adachi, J. Appl. Phys. 53, 8775 (1982).
16. Properties of Lattice-Matched and Strained Indium Gallium Arsenide, edited by, P. Bhatthacharya, (Inspec, London, 1993), Chap., p. 265.
17. D. E. Aspnes, Surf. Sci. 37, 418 (1973).
18. F. H. Pollak and M. Cardona, Phys. Rev. 172, 816 (1968).
19. F. H. Pollak, in Semiconductors and Semimetals, edited by, T. P. Pearsall, (Academic, Boston, 1990), Vol. 32, p. 17.
20. P. M. J. Maŕe, J. C. Barbour, and J. F. Van der Veen, J. Appl. Phys. 62, 4413 (1987).
21. A. V. Drigo, A. Aydinli, A. Carnera, F. Genova, C. Rigo, C. Ferrari, P. Franzosi, and G. Salviati, J. Appl. Phys. 66, 1975 (1989).
22. R. People and J. C. Bean, Appl. Phys. Lett. 0003-6951 47, 332 (1985); R. People and J. C. Bean, Appl. Phys. Lett. 49, 229 (1986).
23. R. People and J. C. Bean, Appl. Phys. Lett. 0003-6951 47, 332 (1985); R. People and J. C. Bean, Appl. Phys. Lett. 49, 229 (1986).
24. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
25. C. A. B. Ball and J. H. van der Merwe, in Dislocation in Solids, edited by, F. R. N. Nabarro, (North-Holland, Amsterdam, 1983).
26. C. Bocchi, A. Bosacchi, S. Franchi, S. Gennari, R. Magnanini, and A. V. Drigo, Appl. Phys. Lett. 71, 1549 (1997).