Spectroscopic ellipsometry for in-line process control of SiGe:C HBT technology

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 273-278

  Fursenko, O ^a   Bauer, J ^a   Zaumseil, P ^a   Kruger D ^a   Goryachko, A ^b   Yamamoto, Y ^a   Kopke K ^a   Tillack, B ^a  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

SiGeC; Spectroscopic ellipsometry

Indexed keywords

COMPOSITION; ELLIPSOMETRY; EPITAXIAL GROWTH; PROCESS CONTROL; REFRACTIVE INDEX; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

IN-LINE THICKNESS; ONE-LAYER STRUCTURES; SIGEC; SPECTROSCOPIC ELLIPSOMETRY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 13244257198     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.058     Document Type: Conference Paper

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