Metrology challenges for 45 nm strained-Si devices

AIP Conference Proceedings

Volumn 788, Issue , 2005, Pages 214-221

  Vartanian, V ^a   Sadaka, M ^a   Zollner, S ^a   Thean, A V Y ^a   White, T ^a   Nguyen, B Y ^a   Zavala, M ^a   McCormick, L ^a   Prabhu, L ^a   Eades, D ^a   Parsons, S ^a   Collard, H ^a   Kim, K ^a   Jiang, J ^a   Dhandapani, V ^a   Hildreth, J ^a   Powers, R ^a   Spencer, G ^a   Ramani, N ^a   Mogab, J ^a   Kottke, M ^a   Canonico, M ^a   Xie, Q ^a   Wang, X D ^a   Vella, J ^a   Contreras, L ^a   Theodore, D ^a   Lu, B ^a   Kriske, T ^a   Gregory, R ^a   Liu, R ^b   more..

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646549862     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2062965     Document Type: Conference Paper

References (30)

1. Y. Taur, Tech. Dig. Int. Symp. VLSI Tech, p.6 (1999)
2. K. Rim, et al., IEDM Technical Digest, p. 707 (1998)
3. T.Ghani, et al., IEDM Technical Digest, p. 11.6.1 (2003)
4. H.S.P. Wong, IBM J. Res. & Dev. 46, 133 (2002)
5. Y.H. Lou et al, Appl. Phys. Lett. 78, 1219 (2001)
6. M.A. Chu, M.O. Tanner, F.Y. Huang K.L. Wang, G.G. Chu, and M.S. Goorsky, J. Cryst. Growth 175-176, 1278 (1997)
7. T. Tezuka et al., Appl. Phys. Lett. 79, 1798 (2001)
8. T. Mizuno et al, IEEE Trans. Electron Devices 48, 1612 (2001)
9. P. Roitman et al., Proc. 1998 IEEE International SOI Conference, p.20 (1998)
10. Z. Y. Cheng et al., IEEE Electron Device Lett. 22, 321 (2001)
11. L. Huang et al., IEEE Trans. Electron Device 49, 1566 (2002)
12. H. C.-H. Wang et al., Technical Digest, p.61 (2003)
13. X-F. Fan, X. Wang, B. Winstead, L. Register,
14. U. Ravaioli, and S. Banerjee, IEEE Trans. Electron Devices, 51, 6 (2004)
15. K Rim et al., IEDM Technical Digest, p.3.1.1 (2003)
16. S. Zollner et al., Thin Solid Films, 455-456, 261 (2004)
17. H. G. Tompkins and E.A. Irene, Handbook of Ellipsometry, Springer, Heidelberg, 2005
18. A.C. Diebold, Handbook of Silicon Semiconductor Metrology, Marcel Dekker, New York, 2001
19. S. T. Pantelides and S. Zollner, Silicon-Germanium Alloys: Growth,Properties, and Applications, Taylor and Francis, New York, 2002
20. V. Holy, U. Pietsch, and T. Baumbach, High-Resolution X-ray Scattering from Thin Films and Multilayers, Springer, Berlin, 1999
21. R. Liu and M. Canonico, in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler et. al., AIP, Melville, NY, 2003, p. 738
22. Q. Xie et al., in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler et. al., AIP, Melville, NY, 2003, p. 223
23. E. A. Fitzgerald et al., J. Vac. Sci. Technol.15, 1048 (1997)
24. Y.B. Bolkhovityanov et al., Sov. Phys. Usp. 44, 655 (2001)
25. J. G. Fiorenza et al., IEEE International Reliability Physics Symp. Proc., p493 (2004)
26. N. Sugii et al., IEDM Technical Digest, p737 (2001)
27. D. K. Bowen and B.T. Tanner, High-resolution x-ray diffractometry and topography, Taylor and Francis, London, 1998
28. D. K. Bowen and R.D. Deslattes, in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler et al., AIP, Melville, NY 2001, 570
29. R. J. Matyi, in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler et. al., AIP, Melville, NY, 2003, p. 634
30. J. Spear, H. Murakami, and S. Terada, in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler et. al., AIP, Melville, NY, 2003, p. 646