Evaluation of strained-silicon by electron backscattering pattern measurement: Comparison study with UV-raman measurement and edge force model calculation

Japanese Journal of Applied Physics

Volumn 50, Issue 1, 2011, Pages

  Tomita, Motohiro ^a   Kosemura, Daisuke ^a,b   Takei, Munehisa ^a   Nagata, Kohki ^a   Akamatsu, Hiroaki ^a   Ogura, Atsushi ^a  

^a MEIJI UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRESS; BIAXIAL STRESS STATE; COMPARISON STUDY; CROSS-HATCH; EDGE FORCES; ELECTRON BACKSCATTERING PATTERNS; GOOD CORRELATIONS; HIGH SPATIAL RESOLUTION; NORMAL STRESS; SI SUBSTRATES; SIN FILMS; SPACE PATTERNS; STRAINED-SI; STRAINED-SILICON; TWO-DIMENSIONAL STRESS; UV-RAMAN;

BACKSCATTERING; ELECTRON SCATTERING; SHEAR STRESS; SILICON; SILICON NITRIDE; STRENGTH OF MATERIALS; STRESS CONCENTRATION; TWO DIMENSIONAL;

MEASUREMENTS;

EID: 79951506511     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.010111     Document Type: Article

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