-
2
-
-
3242671509
-
A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors
-
IEEE International
-
Ghani, T. et al. A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors. IEDM Tech. Digest 978-980 (IEEE International, 2003).
-
(2003)
IEDM Tech. Digest
, pp. 978-980
-
-
Ghani, T.1
-
3
-
-
33748575889
-
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
-
Antoniadis, D. A. et al. Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. IBM J. Res. Dev. 50, 363-376 (2006).
-
(2006)
IBM J. Res. Dev
, vol.50
, pp. 363-376
-
-
Antoniadis, D.A.1
-
4
-
-
19944433396
-
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
-
Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T. & Lochtefeld, A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 011101 (2005).
-
(2005)
J. Appl. Phys
, vol.97
, pp. 011101
-
-
Lee, M.L.1
Fitzgerald, E.A.2
Bulsara, M.T.3
Currie, M.T.4
Lochtefeld, A.5
-
5
-
-
33646043420
-
Uniaxial-process-induced strained-Si: Extending the CMOS roadmap
-
Thompson, S. E., Sun, G. Y., Choi, Y. S. & Nishida, T. Uniaxial-process-induced strained-Si: Extending the CMOS roadmap. IEEE Trans. Electron. Dev. 53, 1010-1020 (2006).
-
(2006)
IEEE Trans. Electron. Dev
, vol.53
, pp. 1010-1020
-
-
Thompson, S.E.1
Sun, G.Y.2
Choi, Y.S.3
Nishida, T.4
-
6
-
-
34248208452
-
Giant piezoresistance effect in silicon nanowires
-
He, R. R. & Yang, P. D. Giant piezoresistance effect in silicon nanowires. Nature Nanotechnol. 1, 42-46 (2006).
-
(2006)
Nature Nanotechnol
, vol.1
, pp. 42-46
-
-
He, R.R.1
Yang, P.D.2
-
7
-
-
33646574983
-
Strained silicon as a new electro-optic material
-
Jacobsen, R. S. et al. Strained silicon as a new electro-optic material. Nature 441, 199-202 (2006).
-
(2006)
Nature
, vol.441
, pp. 199-202
-
-
Jacobsen, R.S.1
-
8
-
-
33747281776
-
Engineering strained silicon: Looking back and into the future
-
Acosta, A. & Sood, S. Engineering strained silicon: looking back and into the future. IEEE Potentials 25, 31-34 (2006).
-
(2006)
IEEE Potentials
, vol.25
, pp. 31-34
-
-
Acosta, A.1
Sood, S.2
-
9
-
-
33646687546
-
Strained silicon - the key to sub-45 nm CMOS
-
Parton, E. & Verheyen, P. Strained silicon - the key to sub-45 nm CMOS. III-Vs Rev. 19, 28-31 (2006).
-
(2006)
III-Vs Rev
, vol.19
, pp. 28-31
-
-
Parton, E.1
Verheyen, P.2
-
10
-
-
33846949189
-
Strain measurement by transmission electron microscopy
-
Foran, B., Clark, M. H. & Lian, G. Strain measurement by transmission electron microscopy. Future Fab Intl 20, 127-129 (2006).
-
(2006)
Future Fab Intl
, vol.20
, pp. 127-129
-
-
Foran, B.1
Clark, M.H.2
Lian, G.3
-
11
-
-
84945501351
-
-
Hÿtch, M. J, Snoeck, E, Houdellier, F. & Hüe, F. Procédé et système de mesure de déformations à l'échelle nanométrique. French Patent Application FR 07 06711
-
Hÿtch, M. J., Snoeck, E., Houdellier, F. & Hüe, F. Procédé et système de mesure de déformations à l'échelle nanométrique. French Patent Application FR 07 06711.
-
-
-
-
12
-
-
0003598030
-
-
2nd edn, ch. 15 Krieger, Malabar, Florida
-
Hirsch, P. B., Howie, A., Nicholson, R., Pashley, D. W. & Whelan, M. J. Electron Microscopy of Thin Crystals 2nd edn, ch. 15 (Krieger, Malabar, Florida, 1977).
-
(1977)
Electron Microscopy of Thin Crystals
-
-
Hirsch, P.B.1
Howie, A.2
Nicholson, R.3
Pashley, D.W.4
Whelan, M.J.5
-
13
-
-
34848890616
-
-
McCartney, M. R. & Smith, D. J. Electron holography: Phase imaging with nanometer resolution. Annu. Rev. Mater. Res. 37, 729-767 (2007).
-
McCartney, M. R. & Smith, D. J. Electron holography: Phase imaging with nanometer resolution. Annu. Rev. Mater. Res. 37, 729-767 (2007).
-
-
-
-
14
-
-
33750148553
-
Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction
-
Zhang, P. et al. Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction. Appl. Phys. Lett. 89, 161907 (2006).
-
(2006)
Appl. Phys. Lett
, vol.89
, pp. 161907
-
-
Zhang, P.1
-
15
-
-
27844598730
-
Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)
-
Usuda, K., Numata, T., Irisawa, T., Hirashita, N.&Takagi, S. Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD). Mater. Sci. Eng. B 124, 143-147 (2005).
-
(2005)
Mater. Sci. Eng. B
, vol.124
, pp. 143-147
-
-
Usuda, K.1
Numata, T.2
Irisawa, T.3
Hirashita, N.4
Takagi, S.5
-
16
-
-
27944465650
-
Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging
-
Li, J., Anjum, D., Hull, R., Xia, G. & Hoyt, J. L. Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging. Appl. Phys. Lett. 87, 222111 (2005).
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 222111
-
-
Li, J.1
Anjum, D.2
Hull, R.3
Xia, G.4
Hoyt, J.L.5
-
17
-
-
4043091241
-
Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
-
Clément, L., Pantel, R., Kwakman, L. F. T. & Rouvière, J.-L. Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations. Appl. Phys. Lett. 85, 651-653 (2004).
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 651-653
-
-
Clément, L.1
Pantel, R.2
Kwakman, L.F.T.3
Rouvière, J.-L.4
-
18
-
-
33747373839
-
Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers
-
Houdellier, F., Roucau, C., Clément, L., Rouvière, J.-L. & Casanove, M.-J. Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers. Ultramicroscopy 106, 951-959 (2006).
-
(2006)
Ultramicroscopy
, vol.106
, pp. 951-959
-
-
Houdellier, F.1
Roucau, C.2
Clément, L.3
Rouvière, J.-L.4
Casanove, M.-J.5
-
19
-
-
0037519622
-
Quantitative measurement of displacement and strain fields from HREM micrographs
-
Hÿtch, M. J., Snoeck, E. & Kilaas, R. Quantitative measurement of displacement and strain fields from HREM micrographs. Ultramicroscopy 74, 131-146 (1998).
-
(1998)
Ultramicroscopy
, vol.74
, pp. 131-146
-
-
Hÿtch, M.J.1
Snoeck, E.2
Kilaas, R.3
-
20
-
-
5444247603
-
Measurement of the displacement field around dislocations to 0.03 Å by electron microscopy
-
Hÿtch, M. J., Putaux, J.-L. & Pénisson, J.-M. Measurement of the displacement field around dislocations to 0.03 Å by electron microscopy. Nature 423, 270-273 (2003).
-
(2003)
Nature
, vol.423
, pp. 270-273
-
-
Hÿtch, M.J.1
Putaux, J.-L.2
Pénisson, J.-M.3
-
21
-
-
38549093243
-
Effects of elastic anisotropy on strain distributions in decahedral gold nanoparticles
-
Johnson, C. L. et al. Effects of elastic anisotropy on strain distributions in decahedral gold nanoparticles. Nature Mater. 7, 120-124 (2008).
-
(2008)
Nature Mater
, vol.7
, pp. 120-124
-
-
Johnson, C.L.1
-
22
-
-
42449161474
-
Direct mapping of strain in a strained-silicon transistor by high-resolution electronmicroscopy
-
Hüe, F., Hÿtch, M. J., Bender, H., Houdellier, F. & Claverie, A. Direct mapping of strain in a strained-silicon transistor by high-resolution electronmicroscopy. Phys. Rev. Lett. 100, 156602 (2008).
-
(2008)
Phys. Rev. Lett
, vol.100
, pp. 156602
-
-
Hüe, F.1
Hÿtch, M.J.2
Bender, H.3
Houdellier, F.4
Claverie, A.5
-
24
-
-
0035054877
-
Imaging conditions for reliable measurement of displacement and strain from high-resolution electron microscope images
-
Hÿtch, M. J. & Plamann, T. Imaging conditions for reliable measurement of displacement and strain from high-resolution electron microscope images. Ultramicroscopy 87, 199-212 (2001).
-
(2001)
Ultramicroscopy
, vol.87
, pp. 199-212
-
-
Hÿtch, M.J.1
Plamann, T.2
-
25
-
-
1142280323
-
A new technique to fabricate ultra-shallow- junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth
-
Loo, R. et al. A new technique to fabricate ultra-shallow- junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth. Appl. Surf. Sci. 224, 63-67 (2004).
-
(2004)
Appl. Surf. Sci
, vol.224
, pp. 63-67
-
-
Loo, R.1
-
26
-
-
27744564695
-
Calibration of projector lens distortions
-
Hüe, F. et al. Calibration of projector lens distortions. J. Electron Microsc. (Tokyo) 54, 181-190 (2005).
-
(2005)
J. Electron Microsc. (Tokyo)
, vol.54
, pp. 181-190
-
-
Hüe, F.1
-
27
-
-
19744383008
-
Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions
-
Yeo, Y. C. & Sun, J. S. Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions. Appl. Phys. Lett. 86, 023103 (2005).
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 023103
-
-
Yeo, Y.C.1
Sun, J.S.2
-
28
-
-
13444257979
-
Improvements in performance of focused ion beam cross-sectioning: Aspects of ion-sample interaction
-
Ishitani, T., Umemura, K., Ohnishi, T., Yaguchi, T. & Kamino, T. Improvements in performance of focused ion beam cross-sectioning: aspects of ion-sample interaction. J. Electron Microsc. 53, 443-449 (2004).
-
(2004)
J. Electron Microsc
, vol.53
, pp. 443-449
-
-
Ishitani, T.1
Umemura, K.2
Ohnishi, T.3
Yaguchi, T.4
Kamino, T.5
-
29
-
-
0032620923
-
Two-dimensional mapping of the electrostatic potential in transistors by electron holography
-
Rau, W. D., Schwander, P., Baumann, F. H., Hoppner, W. & Ourmazd, A. Two-dimensional mapping of the electrostatic potential in transistors by electron holography. Phys. Rev. Lett. 82, 2614-2617 (1999).
-
(1999)
Phys. Rev. Lett
, vol.82
, pp. 2614-2617
-
-
Rau, W.D.1
Schwander, P.2
Baumann, F.H.3
Hoppner, W.4
Ourmazd, A.5
-
30
-
-
27144517477
-
Optical performance of carbon-nanotube electron sources
-
De Jong, N., Allioux, M., Oostveen, J. T., Teo, K. B. K. & Milne, W. I. Optical performance of carbon-nanotube electron sources. Phys. Rev. Lett. 94, 186807 (2005).
-
(2005)
Phys. Rev. Lett
, vol.94
, pp. 186807
-
-
De Jong, N.1
Allioux, M.2
Oostveen, J.T.3
Teo, K.B.K.4
Milne, W.I.5
-
31
-
-
4644297612
-
Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices
-
Wang, Y. Y. et al. Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices. Ultramicroscopy 101, 63-72 (2004).
-
(2004)
Ultramicroscopy
, vol.101
, pp. 63-72
-
-
Wang, Y.Y.1
-
32
-
-
19044379806
-
Optical system for double-biprism electron holography
-
Harada, K., Akashi, T., Togawa, Y., Matsuda, T. & Tonomura, A. Optical system for double-biprism electron holography. J. Electron Microsc. 54, 19-27 (2005).
-
(2005)
J. Electron Microsc
, vol.54
, pp. 19-27
-
-
Harada, K.1
Akashi, T.2
Togawa, Y.3
Matsuda, T.4
Tonomura, A.5
-
33
-
-
39549107655
-
Using a CEOS-objective lens corrector as a pseudo Lorentz lens in a Tecnai F20 TEM
-
Japanese Society of Microscopy, Sapporo
-
Snoeck, E., Hartel, P., Mueller, H., Haider, M. & Tiemeijer, P. C. Using a CEOS-objective lens corrector as a pseudo Lorentz lens in a Tecnai F20 TEM. Proc. 16th Intl Microsc. Congress 2, 730 (Japanese Society of Microscopy, Sapporo, 2006).
-
(2006)
Proc. 16th Intl Microsc. Congress
, vol.2
, pp. 730
-
-
Snoeck, E.1
Hartel, P.2
Mueller, H.3
Haider, M.4
Tiemeijer, P.C.5
-
34
-
-
0003453865
-
-
Wiley, New York
-
Huebner, K. H. H., Dewhirst, D. L., Smith, D. E. & Byrom, T. G. The Finite Element Method for Engineers (Wiley, New York, 2001).
-
(2001)
The Finite Element Method for Engineers
-
-
Huebner, K.H.H.1
Dewhirst, D.L.2
Smith, D.E.3
Byrom, T.G.4
-
35
-
-
0001583016
-
Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron-diffraction measurements
-
Christiansen, S., Albrecht, M., Strunk, H. P. & Maier, H. J. Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron-diffraction measurements. Appl. Phys. Lett. 64, 3617-3619 (1994).
-
(1994)
Appl. Phys. Lett
, vol.64
, pp. 3617-3619
-
-
Christiansen, S.1
Albrecht, M.2
Strunk, H.P.3
Maier, H.J.4
|