Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 113-116

  Usuda, Koji ^a   Mizuno, Tomohisa ^a   Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Moriyama, Yoshihiko ^a   Nakaharai, Shu ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Raman spectroscopy; Relaxation; Silicon germanium; Silicon on insulator (SOI); Strain

Indexed keywords

COMPOSITION; DIFFUSION; DRY ETCHING; ELECTRIC INSULATORS; ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOSFET DEVICES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON;

SILICON GERMANIUM; SILICON ON INSULATOR (SOI); STRAIN RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142292404     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.11.058     Document Type: Conference Paper

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