Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Sun, Y ^a   Thompson, S E ^a   Nishida, T ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS; ENERGY BAND SPLITTING; STRAIN ENHANCEMENT; TIGHT BINDING;

BAND STRUCTURE; HOLE MOBILITY; SEMICONDUCTOR MATERIALS; STRAIN;

MOSFET DEVICES;

EID: 34249948925     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730561     Document Type: Article

References (140)

1. V. Chan, Tech. Dig. - Int. Electron Devices Meet. 2003, 381.
2. T. Ghani, Tech. Dig. - Int. Electron Devices Meet. 2003, 1161.
3. F. Arnaud, VLSI Symp. Tech. Dig. 2004, 10.
4. P. R. Chidambaram, VLSI Symp. Tech. Dig. 2004, 48.
5. R. Khamankar, VLSI Symp. Tech. Dig. 2004, 162.
6. S. Hao, VLSI Symp. Tech. Dig. 2004, 14.
7. S. E. Thompson, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004. 825195 25, 191 (2004).
8. E. Leobandung, VLSI Symp. Tech. Dig. 2005, 126.
9. N. Collaert, VLSI Symp. Tech. Dig. 2006, 52.
10. H. Shang, VLSI Symp. Tech. Dig. 2006, 56.
11. C. Ortolland, VLSI Symp. Tech. Dig. 2006, 78.
12. X. Chen, VLSI Symp. Tech. Dig. 2006, 60.
13. H. M. Manasevit, I. S. Gergis, and A. B. Jones, Appl. Phys. Lett. 0003-6951 10.1063/1.93533 41, 464 (1982).
14. R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Stormer, K. W. Wecht, R. T. Lynch, and K. Baldwin, Appl. Phys. Lett. 0003-6951 10.1063/1.95074 45, 1231 (1984).
15. W. Shockley and J. Bardeen, Phys. Rev. 0031-899X 10.1103/PhysRev.77.407 77, 407 (1950).
16. J. Bardeen and W. Shockley, Phys. Rev. 0031-899X 10.1103/PhysRev.80.72 80, 72 (1950).
17. C. S. Smith, Phys. Rev. 0031-899X 10.1103/PhysRev.94.42 94, 42 (1954).
18. M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, J. Appl. Phys. 0021-8979 10.1063/1.1819976 97, 011101 (2005).
19. P. R. Chidambaram, C. Bowen, S. Chakravathi, C. Machala, and R. Wise, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.872912 53, 944 (2006).
20. S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, J. Appl. Phys. 0021-8979 10.1063/1.362953 80, 1567 (1996).
21. M. V. Fischetti, F. Gámiz, and W. Hänsch, J. Appl. Phys. 0021-8979 10.1063/1.1521796 92, 7320 (2002).
22. R. Oberhuber, G. Zandler, and P. Vogl, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.9941 58, 9941 (1998).
23. M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, J. Appl. Phys. 0021-8979 10.1063/1.1585120 94, 1079 (2003).
24. S. E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida, Tech. Dig. - Int. Electron Devices Meet. 2004, 221.
25. S. Pidin, Tech. Dig. - Int. Electron Devices Meet. 2004, 213.
26. J. Welser, J. L. Hoyt, S. I. Takagi, and J. F. Gibbons, Tech. Dig. - Int. Electron Devices Meet. 1994, 373.
27. M. T. Currie, C. W. Leitz, T. A. Langdo, G. Taraschi, D. A. Antoniadis, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1421554 19, 2268 (2001).
28. K. Rim, Tech. Dig. - Int. Electron Devices Meet. 2003, 49.
29. J. W. Jung, M. L. Lee, S. F. Yu, E. A. Fitzgerald, and D. A. Antoniadis, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2003.814028 24, 460 (2003).
30. C. W. Leitz, M. T. Currie, M. L. Lee, Z. Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, J. Appl. Phys. 0021-8979 10.1063/1.1499213 92, 3745 (2002).
31. C. Herring and E. Vogt, Phys. Rev. 0031-899X 10.1103/PhysRev.101.944 101, 944 (1956).
32. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 0021-8979 10.1063/1.363052 80, 2234 (1996).
33. W. Shockley, Phys. Rev. 0031-899X 10.1103/PhysRev.78.173 78, 173 (1950).
34. J. M. Luttinger and W. Kohn, Phys. Rev. 0031-899X 10.1103/PhysRev.97.869 97, 869 (1955).
35. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
36. W. H. Kleiner and L. M. Roth, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.2.334 2, 334 (1959).
37. H. Hasegawa, Phys. Rev. 0031-899X 10.1103/PhysRev.129.1029 129, 1029 (1963).
38. J. C. Hensel and G. Feher, Phys. Rev. 0031-899X 10.1103/PhysRev.129.1041 129, 1041 (1963).
39. J. C. Hensel, Solid State Commun. 4, 231 (1966). 0038-1098
40. I. Balslev, Phys. Rev. 0031-899X 10.1103/PhysRev.143.636 143, 636 (1966).
41. R. N. Bhargava and M. I. Nathan, Phys. Rev. 0031-899X 10.1103/PhysRev.161.695 161, 695 (1967).
42. F. H. Pollak and M. Cardona, Phys. Rev. 0031-899X 10.1103/PhysRev.172.816 172, 816 (1968).
43. J. Lim, X. Yang, T. Nishida, and S. E. Thompson, Appl. Phys. Lett. 0003-6951 10.1063/1.2245373 89, 073509 (2006).
44. J. Welser, J. L. Hoyt, and J. F. Gibbons, Tech. Dig. - Int. Electron Devices Meet. 1992, 1000.
45. D. K. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, and K. P. MacWilliams, Appl. Phys. Lett. 0003-6951 10.1063/1.109205 62, 2853 (1993).
46. S. Ito, Tech. Dig. - Int. Electron Devices Meet. 2000, 247.
47. A. Shimizu, K. Hachimine, N. Ohki, H. Ohta, M. Koguchi, Y. Nonaka, H. Sato, and F. Ootsuka, Tech. Dig. - Int. Electron Devices Meet. 2001, 433.
48. R. Arghavani, L. Xia, H. M'Saad, M. Balseanu, G. Karunasiri, A. Mascarenhas, and S. E. Thompson, IEEE Electron Device Lett. 27, 114 (2006). 0741-3106
49. S. Gannavaram, N. Pesovic, and C. Ozturk, Tech. Dig. - Int. Electron Devices Meet. 2000, 437.
50. K. Uchida, R. Zednik, C. Lu, H. Jagannathan, J. McVitie, P. C. McIntyre, and Y. Nishi, Tech. Dig. - Int. Electron Devices Meet. 2004, 229.
51. S. E. Thompson, Tech. Dig. - Int. Electron Devices Meet. 2002, 61.
52. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, 3rd ed. (Springer, Berlin, 2001).
53. J. Lim, S. E. Thompson, and J. G. Fossum, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.837581 25, 731 (2004).
54. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, Tech. Dig. - Int. Electron Devices Meet. 2005, 129.
55. R. Shankar, Principles of Quantum Mechanics, 2nd ed. (Kluwer Academic, New York, 1994).
56. J. C. Slater and G. F. Koster, Phys. Rev. 0031-899X 10.1103/PhysRev.94. 1498 94, 1498 (1954).
57. D. J. Chadi and M. L. Cohen, Phys. Status Solidi B 68, 405 (1975).
58. W. A. Harrison, Electronic Structure and the Properties of Solids (Dover, New York, 1989).
59. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 0022-3697 10.1016/0022-3697(83)90064-1 44, 365 (1983).
60. C. Priester, G. Allan, and M. Lannoo, Phys. Rev. B 0163-1829 10.1103/PhysRevB.37.8519 37, 8519 (1988).
61. D. J. Chadi, Phys. Rev. B 16, 790 (1977).
62. T. B. Boykin, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.1620 57, 1620 (1998).
63. T. B. Boykin, G. Klimeck, R. C. Bowen, and R. Lake, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56.4102 56, 4102 (1997).
64. G. Klimeck, R. C. Bowen, T. B. Boykin, C. S. Lazaro, T. A. Cwik, and A. Stoica, Superlattices Microstruct. 0749-6036 10.1006/spmi.1999.0797 27, 77 (2000).
65. N. Cavassilas, F. Aniel, K. Boujdaria, and G. Fishman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.115207 64, 115207 (2001).
66. T. B. Boykin, G. Klimeck, R. C. Bowen, and F. Oyafuso, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.125207 66, 125207 (2002).
67. Energy integrals used in Chadi and Cohen's work (see Ref.). In Slater and Koster's work (see Ref.) and Harrison's book (see Ref.), symbols E were used instead of V, and they differ by a factor of 4.
68. N. Cavassilas, F. Aniel, and G. Fishman, Nanotech 2002 Vol. 2: Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology., 2002, pp. 411-414.
69. T. B. Boykin, G. Klimeck, and F. Oyafuso, Phys. Rev. B 0163-1829 10.1103/PhysRevB.69.115201 69, 115201 (2004).
70. J. -M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.6493 57, 6493 (1998).
71. M. Cardona and F. Pollak, Phys. Rev. 0031-899X 10.1103/PhysRev.142.530 142, 530 (1966).
72. B. A. Foreman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.4964 48, 4964 (1993).
73. J. M. Luttinger, Phys. Rev. 0031-899X 10.1103/PhysRev.102.1030 102, 1030 (1956).
74. D. Rideau, M. Feraille, L. Ciampolini, M. Minondo, C. Tavernier, H. Jaouen, and A. Ghetti, http://arxiv.org/PS_cache/cond-mat/pdf/0607/0607510.pdf.
75. C. Mailhiot and D. L. Smith, Phys. Rev. B 0163-1829 10.1103/PhysRevB.33. 8360 33, 8360 (1986).
76. P. Lawaetz, Phys. Rev. B 4, 3460 (1971).
77. C. G. Van de Walle, Phys. Rev. B 0163-1829 10.1103/PhysRevB.39.1871 39, 1871 (1989).
78. L. D. Laude, F. H. Pollak, and M. Cardona, Phys. Rev. B 3, 2623 (1971).
79. M. Chandrasekhar and F. H. Pollak, Phys. Rev. B 15, 2127 (1977).
80. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 0021-8979 10.1063/1.1368156 89, 5815 (2001).
81. C. Y.-P. Chao and S. L. Chuang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.46.4110 46, 4110 (1992).
82. Physics of Optoelectronic Devices, edited by, S. L. Chuang, (Wiley, New York, 1992).
83. D. Long, Phys. Rev. 0031-899X 10.1103/PhysRev.120.2024 120, 2024 (1960).
84. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.55.645 55, 645 (1983).
85. D. K. Ferry, Semiconductors (Macmillan, New York, 1991).
86. H. Miyata, T. Yamada, and D. K. Ferry, Appl. Phys. Lett. 0003-6951 10.1063/1.109278 62, 2661 (1993).
87. J. D. Wiley, Phys. Rev. B 4, 2485 (1971).
88. F. Szmulowicz, Appl. Phys. Lett. 0003-6951 10.1063/1.94360 43, 485 (1983).
89. F. Szmulowicz, Phys. Rev. B 28, 5934 (1983).
90. B. K. Ridley, Quantum Processes in Semiconductors, 4th ed. (Clarendon, Oxford, 1999).
91. X. Yang, J. Lim, G. Sun, K. Wu, T. Nishida, and S. E. Thompson, Appl. Phys. Lett. 0003-6951 10.1063/1.2168671 88, 052108 (2006).
92. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.54.437 54, 437 (1982).
93. F. Stern, J. Appl. Phys. 39, 1930 (1968).
94. F. Stern, Phys. Rev. B 5, 4891 (1972).
95. R. B. Langhlin, J. D. Joannopoulis, and D. J. Chadi, Phys. Rev. B 21, 5723 (1980).
96. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 0021-8979 10.1063/1.363052 80, 2234 (1996).
97. G. Sun and S. E. Thompson (unpublished).
98. M. V. Fischetti and S. E. Laux, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.2244 48, 2244 (1993).
99. S. E. Thompson, G. Sun, Y. S. Choi, and T. Nishida, IEEE Trans. Electron Devices 53, 1010 (2006).
100. T. Vogelsang and K. R. Hofmann, Appl. Phys. Lett. 0003-6951 10.1063/1.110394 63, 186 (1993).
101. M. L. Lee and E. A. Fitzgerald, J. Appl. Phys. 0021-8979 10.1063/1.1590052 94, 2590 (2003).
102. T. Low, Tech. Dig. - Int. Electron Devices Meet. 2004, 151.
103. E. Wang, Tech. Dig. - Int. Electron Devices Meet. 2004, 147.
104. Meet the world's first 45 nm processor, http://www.intel.com/technology/ silicon/45nm_technology.htm.
105. IBM advancement to spawn new generation of chips, http://www-03.ibm.com/ press/us/en/pressrelease/20980.wss.
106. P. Bai, Tech. Dig. - Int. Electron Devices Meet. 2004, 657.
107. K. Mistry, VLSI Symp. Tech. Dig. 2004, 50.
108. E. O. Kane, J. Phys. Chem. Solids 0022-3697 10.1016/0022-3697(57)90013-6 1, 249 (1957).
109. T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, Jpn. J. Appl. Phys. 19, L 225 (1980). 0021-4922
110. R. C. Eden, GaAs IC Symposium 25th Annual Technical Digest., San Diego, CA, 2003, p. 7.
111. SRC promotes III-V CMOS to push beyond silicon, http://www.fabtech.org/ content/view/1659.
112. S. E. Thompson, R. S. Chau, T. Ghani, K. Mistry, S. Tyagi, and M. T. Bohr, IEEE Trans. Semicond. Manuf. 0894-6507 10.1109/TSM.2004.841816 18, 26 (2005).
113. S. E. Thompson, S. Suthram, Y. Sun, G. Sun, S. Parthasarathy, M. Chu, and T. Nishida, Tech. Dig.-Int. Electron Device Meet., 2006 (to be published).
114. M. Schulz and E. Klansmann, J. Appl. Phys. 18, 169 (1979).
115. C. C. Shiue and C. T. Sah, Phys. Rev. B 19, 2149 (1979).
116. N. Suzuki, T. Hariu, and Y. Shibata, Appl. Phys. Lett. 0003-6951 10.1063/1.90495 33, 761 (1978).
117. R. P. H. Chang and J. J. Coleman, Appl. Phys. Lett. 0003-6951 10.1063/1.90040 32, 332 (1978).
118. T. Mimura, N. Yokoyama, and M. Fukuta, Appl. Phys. Lett. 0003-6951 10.1063/1.90622 34, 642 (1979).
119. J. Nishizawa and I. Shiota, Inst. Phys. Conf. Ser. 4, 289 (1980).
120. M. Passlack, M. Hong, J. P. Mannaerts, S. N. G. Chu, R. L. Opila, and N. Moriya, Tech. Dig. - Int. Electron Devices Meet. 2005, 383.
121. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. R. Kwo, IEEE Trans. Electron Devices 0018-9383 10.1109/16.557709 44, 214 (1997).
122. M. Hong, F. Ren, J. M. Kuo, W. S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian, and Y. K. Chen, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.590083 16, 1398 (1997).
123. Y. C. Wang, IEEE Electron Device Lett. 20, 457 (1999).
124. Freescale "solves" GaAs gate oxide problem, http://www.compoundsemiconductor.net/articles/news/10/1/25/1.
125. K. Rajagopalan, R. Drooopad, J. Abrokwah, and M. Passlack, CS MANTECH Conference, Vancouver, British Columbia, Canada, 2006, p. 119.
126. K. Rajagopalan, R. Droopad, J. Abrokwah, P. Zurcher, P. Fejes, and M. Passlack, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.889502 28, 100 (2007).
127. M. V. Fischetti and S. E. Laux, IEEE Trans. Electron Devices 0018-9383 10.1109/16.75177 38, 650 (1991).
128. A. Rahman, G. Klimeck, and M. Lundstrom, Tech. Dig. - Int. Electron Devices Meet. 2005, 601.
129. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
130. X. M. Weng, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/8/34/ 012 8, 6229 (1996).
131. D. M. Riffe, J. Opt. Soc. Am. B 19, 1092 (2002). 0740-3224
132. K. Yeom, H. Jiang, and J. Singh, J. Appl. Phys. 0021-8979 10.1063/1.364037 81, 1807 (1997).
133. P. Junker, U. Kops, and U. Merkt, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.4794 49, 4794 (1994).
134. Semiconductor on NSM, http://www.ioffe.rssi.ru/SVA/NSM/Semicond/.
135. Data in Science and Technology: Semiconductors-Group IV Elements and III-V Compounds, edited by, O. Madelung, (Springer, Berlin, 1991).
136. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, New York, 1998).
137. K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, Proc. IEEE 0018-9219 10.1109/JPROC.2002.808156 91, 305 (2003).
138. A. Pethe, T. Krishnamohan, D. Kim, S. Oh, H. C. P. Wong, Y. Nishi, and K. C. Saraswat, 16th Biennial University Government Industry Microelectronics Symposium., San Jose State University, San Jose, CA, 2006.
139. T. Krishnamohan, D. Kim, Y. Nishi, and K. Saraswat, E-MRS 2006 Spring Meeting-SYMPOSIUM B: From Strained Silicon to Nanotubes: Novel channels for field effect devices., Nice, France, 2006, p. 147.
140. E. O. Kane, J. Appl. Phys. 0021-8979 10.1063/1.1735965 32, 83 (1961).