Measurement of strain in locally oxidized silicon using convergent-beam electron diffraction

Japanese Journal of Applied Physics

Volumn 32, Issue 2 A, 1993, Pages 211-213

  Kimoto, Koji ^a   Usami, Katsuhisa ^a   Sakata, Hiroshi ^a   Tanaka, Michiyoshi ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Convergent beam electron diffraction (CBED); Large scale integrated circuits (LSIs); Locallyoxidized silicon (LOCOS); Strain; Stress

Indexed keywords

ELECTRON BEAMS; ELECTRON DIFFRACTION; FABRICATION; SILICA; SPECIMEN PREPARATION; STRAIN MEASUREMENT; STRESSES; SUBSTRATES;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); LOCALLY OXIDIZED SILICON (LOCOS); STRESS DISTRIBUTION; TENSILE STRESS;

LSI CIRCUITS;

EID: 0027543328     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L211     Document Type: Article

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