Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 137-142

  Johs, B ^a   Herzinger, C M ^a   Dinan, J H ^b   Cornfeld, A ^b   Benson, J D ^b  

^a J A WOOLLAM CO INC   (United States)

^b US Army CECOM Night Vision   (United States)

Author keywords

Ellipsometry; HgCdTe; In situ characterization; Optical constants

Indexed keywords

COMPOSITION EFFECTS; ELLIPSOMETRY; MATHEMATICAL MODELS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; POLYNOMIALS; SEMICONDUCTOR GROWTH; SPECTROMETRY;

OPTICAL CONSTANTS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 1342318416     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00800-6     Document Type: Article

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