Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 247-249

  Ito, Shinya ^a   Namba, Hiroaki ^a   Yamaguchi, Kensuke ^a   Hirata, Tsuyoshi ^a   Ando, Koichi ^a   Koyama, Shin ^a   Kuroki, Shunichiro ^a   Ikezawa, Nobuyuki ^a   Suzuki, Tatsuya ^a   Saitoh, Takehiro ^a   Horiuchi, Tadahiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HOLE MOBILITY; NITRIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES; TRANSCONDUCTANCE;

DEEP SUBMICRON TRANSISTORS;

MOSFET DEVICES;

EID: 0034452586     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904303     Document Type: Article

References (9)