Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Materials Science and Engineering: B

Volumn 135, Issue 3, 2006, Pages 192-194

  Perova, T S ^a   Lyutovich, K ^b   Kasper, E ^b   Waldron, A ^a   Oehme, M ^b   Moore, R A ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Epitaxial silicon; Germanium; Raman spectroscopy; Silicon

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; ULTRATHIN FILMS;

COHERENCE CONDITIONS.; EPITAXIAL SILICON; PHONON BANDS; VIRTUAL SUBSTRATES;

SEMICONDUCTING SILICON;

EID: 33750707298     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.002     Document Type: Article

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