Subwavelength-resolution raman microscopy of Si structures using metal-particle-topped AFM probe

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Poborchii, Vladimir ^a,b   Tada, Tetsuya ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Atomic force microscopy; Polarization of light; Raman microscopy; Silicon; Stress; Subwavelength resolution

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT ABSORPTION; LIGHT POLARIZATION; OXIDATION; PHOTONS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; STRESSES; THIN FILMS; TRANSISTORS;

RAMAN MEASUREMENTS; RAMAN SIGNAL; SUBWAVELENGTH RESOLUTION; THERMAL OXIDATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 17444390895     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L202     Document Type: Article

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