Micro-raman stress characterization of polycrystalline silicon films grown at high temperature

Materials Science and Engineering: B

Volumn 112, Issue 2-3 SPEC. ISS., 2004, Pages 160-164

  Teixeira, R C ^a   Doi, I ^a   Zakia, M B P ^a   Diniz, J A ^a   Swart, J W ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Chemical vapor deposition; Polycrystalline silicon; Stress; Thin film

Indexed keywords

ANNEALING; BACKSCATTERING; MICROELECTROMECHANICAL DEVICES; MOS DEVICES; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FILM FORMATION PROCESS; POWER DENSITY; SILICON CRYSTAL GRAINS; STRESS CHARACTERIZATION;

POLYSILICON;

EID: 4344561556     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.025     Document Type: Article

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