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Volumn 135, Issue 3, 2006, Pages 184-187
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Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy
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Author keywords
Raman spectroscopy; SiGe; Strain relaxation; Strained silicon
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Indexed keywords
ELECTRON BEAM LITHOGRAPHY;
NANOTECHNOLOGY;
RAMAN SPECTROSCOPY;
REACTIVE ION ETCHING;
STRAIN;
STRESS RELAXATION;
TENSILE STRESS;
ULTRAVIOLET RADIATION;
EPITAXIAL LAYERS;
NANO-PATTERNING;
STRAIN RELAXATION;
STRAINED SILICON;
SEMICONDUCTING SILICON;
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EID: 33750744492
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2006.08.023 Document Type: Article |
Times cited : (22)
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References (13)
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