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Volumn 135, Issue 3, 2006, Pages 184-187

Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy

Author keywords

Raman spectroscopy; SiGe; Strain relaxation; Strained silicon

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; NANOTECHNOLOGY; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; STRAIN; STRESS RELAXATION; TENSILE STRESS; ULTRAVIOLET RADIATION;

EID: 33750744492     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.023     Document Type: Article
Times cited : (22)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.